Rafin S M Sajjad Hossain, Ahmed Roni, Haque Md Asadul, Hossain Md Kamal, Haque Md Asikul, Mohammed Osama A
Energy Systems Research Laboratory, Department of ECE, Florida International University, Miami, FL 33174, USA.
Department of ECE, Presidency University, Dhaka 1212, Bangladesh.
Micromachines (Basel). 2023 Oct 31;14(11):2045. doi: 10.3390/mi14112045.
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, electron mobility, voltage/current ratings, switching frequency, and device packaging. The historical evolution of each material is traced from early research devices to current commercial offerings. Significant focus is given to SiC and GaN as they are now actively competing with Si devices in the market, enabled by their higher bandgaps. The paper details advancements in material growth, device architectures, reliability, and manufacturing that have allowed SiC and GaN adoption in electric vehicles, renewable energy, aerospace, and other applications requiring high power density, efficiency, and frequency operation. Performance enhancements over Si are quantified. However, the challenges associated with the advancements of these devices are also elaborately described: material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference. Alongside the cost reduction through improved manufacturing, material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference are critical hurdles of this technology. The review analyzes these issues and emerging solutions using advanced packaging, circuit integration, novel cooling techniques, and modeling. Overall, the manuscript provides a timely, rigorous examination of the state of the art in wide bandgap power semiconductors. It balances theoretical potential and practical limitations while assessing commercial readiness and mapping trajectories for further innovation. This article will benefit researchers and professionals advancing power electronic systems.
本文全面综述了宽带隙和超宽带隙功率电子半导体器件，比较了硅（Si）、碳化硅（SiC）、氮化镓（GaN）以及新兴的金刚石器件技术。所考察的关键参数包括带隙、临界电场、电子迁移率、电压/电流额定值、开关频率和器件封装。追溯了每种材料从早期研究器件到当前商业产品的历史演变。重点关注SiC和GaN，因为它们凭借更高的带隙，目前正在市场上与硅器件展开激烈竞争。本文详细介绍了材料生长、器件架构、可靠性和制造方面的进展，这些进展使得SiC和GaN能够应用于电动汽车、可再生能源、航空航天以及其他需要高功率密度、高效率和高频运行的领域。量化了相对于硅的性能提升。然而，也详细描述了这些器件发展所面临的挑战：材料可用性、热管理、栅极驱动设计、电气绝缘和电磁干扰。除了通过改进制造来降低成本外，材料可用性、热管理、栅极驱动设计、电气绝缘和电磁干扰是这项技术的关键障碍。该综述使用先进封装、电路集成、新型冷却技术和建模分析了这些问题及新兴解决方案。总体而言，本文对宽带隙功率半导体的现状进行了及时、严谨的审视。在评估商业就绪程度并规划进一步创新的轨迹时，它平衡了理论潜力和实际限制。本文将使推进功率电子系统的研究人员和专业人士受益。
Zotero 插件
