Read John C, Stewart Derek A, Reiner James W, Terris Bruce D
Western Digital Corporation, 5601 Great Oaks Pkwy, San Jose, California 95119, United States.
ACS Appl Mater Interfaces. 2021 Aug 11;13(31):37398-37411. doi: 10.1021/acsami.1c10131. Epub 2021 Aug 2.
The physical properties of ovonic threshold switching (OTS) materials are of great interest due to the use of OTS materials as selectors in cross-point array nonvolatile memory systems. Here, we show that the topological constraint theory (TCT) of chalcogenide glasses provides a robust framework to describe the physical properties of sputtered thin film OTS materials and electronic devices. Using the mean coordination number (MCN) of an OTS alloy as a comparative metric, we show that changes in data trends from several measurements are signatures of the transition from a floppy to a rigid glass network as described by TCT. This approach provides a means to optimize OTS selector materials for device applications using film-level measurements.
由于硫系玻璃阈值开关（OTS）材料在交叉点阵列非易失性存储系统中用作选择器，其物理性质备受关注。在此，我们表明硫系玻璃的拓扑约束理论（TCT）为描述溅射薄膜OTS材料和电子器件的物理性质提供了一个强大的框架。使用OTS合金的平均配位数（MCN）作为比较指标，我们表明多次测量数据趋势的变化是如TCT所描述的从软玻璃网络向刚性玻璃网络转变的特征。这种方法提供了一种利用薄膜级测量来优化用于器件应用的OTS选择器材料的手段。
