Interfacial engineering of CuFeS quantum dots via platinum decoration with enhanced Cr(VI) reduction dynamics under UV-Vis-NIR radiation.

Configuring reactive and stable catalytic interfaces is crucial to design efficient photocatalysts for Cr(VI) reduction. Herein, via the platinum decoration approach based on interfacial engineering, we developed an effective catalytic interface within novel semiconducting chalcopyrite quantum dots (Pt/CuFeS QDs). Benefiting from the catalytic merits of the Pt modulated interfacial structure and electronic structure, Pt/CuFeS QDs show a broader light absorption capability extending to near-infrared radiation (NIR) range with superior carriers separation performance and faster charge transfer efficiency, which delivers a three-folder faster photocatalytic Cr(VI) reduction efficiency comparing to the original CuFeS QDs. Density functional theory (DFT) calculations unravel that Pt atoms prefer to be anchored with the surface S atoms to form a stable interfacial structure with faster electron transfer and Cr(VI) reduction dynamics. This work demonstrates that platinum decoration based on interfacial engineering is an effective strategy to simultaneously modulate the band structure and accelerate the interfacial reaction dynamics for semiconductor photocatalysts, which paves the way for designing highly efficient photocatalysts for light-driven environmental and energy engineering applications.