Nam Ki-Bong, Yeo Jin-Ho, Hu Qicheng, Kim Mun Ja, Oh Byungdu, Yoo Ji-Beom
SKKU Advanced Institute of Nanotechnology (SAINT), and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
Mask Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd, Hwaseong, 445-701, Republic of Korea.
Nanotechnology. 2021 Aug 23;32(46). doi: 10.1088/1361-6528/ac19d9.
An extreme ultraviolet (EUV) pellicle consists of freestanding thin films on a frame; these films are tens of nanometers in thickness and can include Si, SiN, or graphite. Nanometer-thick graphite films (NGFs), synthesized via chemical vapor deposition on a metal catalyst, are used as a pellicle material. The most common method to transfer NGFs onto a substrate or a frame is to use polymethyl methacrylate (PMMA) as a supporting layer. However, this PMMA-mediated technique involves several disadvantages in term of manufacturing NGF EUV pellicles. When removing the PMMA using acetone or Oplasma, defects or deflections can occur in the NGFs. Furthermore, PMMA residues are generally present on large-area NGFs. In this study, a transfer method using camphor instead of PMMA as the supporting layer was developed to overcome these problems. After the camphor/NGF was formed on the frame, camphor was removed via sublimation in an atmosphere of ethanol vapor. This study investigated the deposition and sublimation of camphor, and confirmed that no residue was present and no deflection or defects were observed in the NGFs. Thus, a large-area NGF pellicle was successfully fabricated using the camphor transfer process.
极紫外(EUV)防护膜由框架上的独立薄膜组成;这些薄膜厚度为几十纳米,可包括硅、氮化硅或石墨。通过化学气相沉积在金属催化剂上合成的纳米厚石墨薄膜(NGF)用作防护膜材料。将NGF转移到基板或框架上最常用的方法是使用聚甲基丙烯酸甲酯(PMMA)作为支撑层。然而,这种PMMA介导的技术在制造NGF EUV防护膜方面存在几个缺点。当使用丙酮或等离子体去除PMMA时,NGF中可能会出现缺陷或变形。此外,大面积的NGF上通常会有PMMA残留。在本研究中,开发了一种使用樟脑代替PMMA作为支撑层的转移方法来克服这些问题。在框架上形成樟脑/NGF后,通过在乙醇蒸气气氛中升华去除樟脑。本研究对樟脑的沉积和升华进行了研究,并证实没有残留,且在NGF中未观察到变形或缺陷。因此,使用樟脑转移工艺成功制造出了大面积的NGF防护膜。