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用于大规模生产超过10纳米的纳米器件的大规模独立式纳米厚石墨薄膜。

Large-scale freestanding nanometer-thick graphite pellicles for mass production of nanodevices beyond 10 nm.

作者信息

Kim Seul-Gi, Shin Dong-Wook, Kim Taesung, Kim Sooyoung, Lee Jung Hun, Lee Chang Gu, Yang Cheol-Woong, Lee Sungjoo, Cho Sang Jin, Jeon Hwan Chul, Kim Mun Ja, Kim Byung-Gook, Yoo Ji-Beom

机构信息

SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea.

出版信息

Nanoscale. 2015 Sep 21;7(35):14608-11. doi: 10.1039/c5nr03079j.

Abstract

Extreme ultraviolet lithography (EUVL) has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10 nm. We present a new pellicle material, nanometer-thick graphite film (NGF), which shows an extreme ultraviolet (EUV) transmission of 92% at a thickness of 18 nm. The maximum temperature induced by laser irradiation (λ = 800 nm) of 9.9 W cm(-2) was 267 °C, due to the high thermal conductivity of the NGF. The freestanding NGF was found to be chemically stable during annealing at 500 °C in a hydrogen environment. A 50 × 50 mm large area freestanding NGF was fabricated using the wet and dry transfer (WaDT) method. The NGF can be used as an EUVL pellicle for the mass production of nanodevices beyond 10 nm.

摘要

极紫外光刻(EUVL)作为将尺寸缩小扩展至10纳米以下的一种有前景的候选技术,在半导体行业备受关注。我们展示了一种新型防护膜材料,即纳米厚石墨膜(NGF),其在18纳米厚度时具有92%的极紫外(EUV)透过率。由于NGF具有高导热性,在9.9 W cm(-2)的激光辐照(λ = 800 nm)下诱导的最高温度为267°C。在氢气环境中500°C退火期间,发现独立的NGF化学稳定。使用湿法和干法转移(WaDT)方法制备了50×50毫米大面积的独立NGF。NGF可用作10纳米以上纳米器件大规模生产的EUVL防护膜。

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