Chiu Po-Hsiang, Cheng Wei-Han, Lee Ming-Tsang, Yasuda Kiyokazu, Song Jenn-Ming
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan.
Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.
Nanomaterials (Basel). 2021 Jul 20;11(7):1864. doi: 10.3390/nano11071864.
Copper oxide particles of various sizes and constituent phases were used to form conductive circuits by means of photonic sintering. With the assistance of extremely low-energy-density xenon flash pulses (1.34 J/cm), a mixture of nano/submicron copper oxide particles can be reduced in several seconds to form electrical conductive copper films or circuits exhibiting an average thickness of 6 μm without damaging the underlying polymeric substrate, which is quite unique compared to commercial nano-CuO inks whose sintered structure is usually 1 μm or less. A mixture of submicron/nano copper oxide particles with a weight ratio of 3:1 and increasing the fraction of CuO in the copper oxide both decrease the electrical resistivity of the reduced copper. Adding copper formate further improved the continuity of interconnects and, thereby, the electrical conductance. Exposure to three-pulse low-energy-density flashes yields an electrical resistivity of 64.6 μΩ·cm. This study not only shed the possibility to use heat-vulnerate polymers as substrate materials benefiting from extremely low-energy light sources, but also achieved photonic-sintered thick copper films through the adoption of submicron copper oxide particles.
通过光子烧结,利用各种尺寸和组成相的氧化铜颗粒来形成导电电路。在极低能量密度的氙闪光灯脉冲(1.34 J/cm)的辅助下,纳米/亚微米氧化铜颗粒的混合物可在几秒钟内被还原,以形成平均厚度为6μm的导电铜膜或电路,且不会损坏下面的聚合物基板,这与商业纳米CuO油墨相比非常独特,后者的烧结结构通常为1μm或更小。重量比为3:1的亚微米/纳米氧化铜颗粒混合物以及增加氧化铜中CuO的比例均会降低还原铜的电阻率。添加甲酸铜进一步改善了互连的连续性,从而提高了电导率。暴露于三脉冲低能量密度闪光下可得到64.6μΩ·cm的电阻率。这项研究不仅揭示了利用极低能量光源将热敏感聚合物用作基板材料的可能性,还通过采用亚微米氧化铜颗粒实现了光子烧结厚铜膜。