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通过电弧放电合成的纳米颗粒多层烧结制备的高导电性铜膜。

Highly conductive copper films prepared by multilayer sintering of nanoparticles synthesized via arc discharge.

作者信息

Fu Qingqing, Li Wen, Kruis Frank Einar

机构信息

Institute of Technology for Nanostructures (NST) and Center for Nanointegration Duisburg-Essen (CENIDE), Faculty of Engineering, University of Duisburg-Essen, Bismarckstr. 81, D-47057 Duisburg, Germany.

出版信息

Nanotechnology. 2023 Mar 14;34(22). doi: 10.1088/1361-6528/acbd1f.

Abstract

The major challenges in producing highly electrically conductive copper films are the oxide content and the porosity of the sintered films. This study developed a multilayer sintering method to remove the copper oxides and reduce copper film porosity. We used a self-built arc discharge reactor to produce copper nanoparticles. Copper nanoparticles produced by arc discharge synthesis have many advantages, such as low cost and a high production rate. Conductive inks were prepared from copper nanoparticles to obtain thin copper films on glass substrates. As demonstrated by scanning electron microscopy analyses and electrical resistivity measurements, the copper film porosity and electrical resistivity cannot be significantly reduced by prolonged sintering time or increasing single film thickness. Instead, by applying the multilayer sintering method, where the coating and sintering process was repeated up to four times in this study, the porosity of copper films could be effectively reduced from 33.6% after one-layer sintering to 3.7% after four-layer sintering. Copper films with an electrical resistivity of 3.49 ± 0.35Ω·cm (two times of the bulk copper) have been achieved after four-layer sintering, while one-layer sintered copper films were measured to possess resistivity of 11.17 ± 2.17Ω·cm.

摘要

制备高导电铜膜的主要挑战在于烧结膜的氧化物含量和孔隙率。本研究开发了一种多层烧结方法,以去除氧化铜并降低铜膜孔隙率。我们使用自行搭建的电弧放电反应器来制备铜纳米颗粒。通过电弧放电合成制备的铜纳米颗粒具有许多优点,如成本低和生产率高。由铜纳米颗粒制备导电油墨,以在玻璃基板上获得薄铜膜。扫描电子显微镜分析和电阻率测量表明,延长烧结时间或增加单层膜厚度并不能显著降低铜膜孔隙率和电阻率。相反,通过应用多层烧结方法,在本研究中涂层和烧结过程重复多达四次,铜膜孔隙率可从单层烧结后的33.6%有效降低至四层烧结后的3.7%。四层烧结后获得了电阻率为3.49±0.35Ω·cm(为块状铜的两倍)的铜膜,而单层烧结铜膜的电阻率测量值为11.17±2.17Ω·cm。

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