Qaid Saif M H, Ghaithan Hamid M, AlHarbi Khulod K, Al-Asbahi Bandar Ali, Aldwayyan Abdullah S
Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia.
Department of Physics, Faculty of Science, Ibb University, Ibb 70270, Yemen.
Polymers (Basel). 2021 Aug 2;13(15):2574. doi: 10.3390/polym13152574.
Photonic devices based on perovskite materials are considered promising alternatives for a wide range of these devices in the future because of their broad bandgaps and ability to contribute to light amplification. The current study investigates the possibility of improving the light amplification characteristics of CsPbBr perovskite quantum dot (PQD) films using the surface encapsulation technique. To further amplify emission within a perovskite layer, CsPbBr PQD films were sandwiched between two transparent layers of poly(methyl methacrylate) (PMMA) to create a highly flexible PMMA/PQD/PMMA waveguide film configuration. The prepared perovskite film, primed with a polymer layer coating, shows a marked improvement in both emission efficiency and amplified spontaneous emission (ASE)/laser threshold compared with bare perovskite films on glass substrates. Additionally, significantly improved photoluminescence (PL) and long decay lifetime were observed. Consequently, under pulse pumping in a picosecond duration, ASE with a reduction in ASE threshold of ~1.2 and 1.4 times the optical pumping threshold was observed for PQDs of films whose upper face was encapsulated and embedded within a cavity comprising two PMMA reflectors, respectively. Moreover, the exposure stability under laser pumping was greatly improved after adding the polymer coating to the top face of the perovskite film. Finally, this process improved the emission and PL in addition to enhancements in exposure stability. These results were ascribed in part to the passivation of defects in the perovskite top surface, accounting for the higher PL intensity, the slower PL relaxation, and for about 14 % of the ASE threshold decrease.
基于钙钛矿材料的光子器件因其宽带隙和有助于光放大的能力,被认为是未来众多此类器件的有前途的替代品。当前的研究调查了使用表面封装技术改善CsPbBr钙钛矿量子点(PQD)薄膜光放大特性的可能性。为了进一步放大钙钛矿层内的发射,将CsPbBr PQD薄膜夹在两个聚甲基丙烯酸甲酯(PMMA)透明层之间,以形成高度柔性的PMMA/PQD/PMMA波导薄膜结构。制备的钙钛矿薄膜,涂有聚合物层涂层,与玻璃基板上的裸钙钛矿薄膜相比,在发射效率和放大自发发射(ASE)/激光阈值方面都有显著提高。此外,还观察到光致发光(PL)显著改善且衰减寿命延长。因此,在皮秒持续时间的脉冲泵浦下,对于其上表面分别被封装并嵌入由两个PMMA反射器组成的腔体内的薄膜中的PQD,观察到ASE阈值降低,分别约为光泵浦阈值的1.2倍和1.4倍。此外,在钙钛矿薄膜顶面添加聚合物涂层后,激光泵浦下的曝光稳定性大大提高。最后,这个过程除了提高曝光稳定性外,还改善了发射和PL。这些结果部分归因于钙钛矿顶面缺陷的钝化,这解释了更高的PL强度、更慢的PL弛豫以及约14%的ASE阈值降低。