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用于相干绿光发射的粉末状溴化铯铅(CsPbBr)钙钛矿量子点薄膜的制备

Fabrication of Thin Films from Powdered Cesium Lead Bromide (CsPbBr) Perovskite Quantum Dots for Coherent Green Light Emission.

作者信息

Qaid Saif M H, Ghaithan Hamid M, Al-Asbahi Bandar Ali, Alqasem Abdulaziz, Aldwayyan Abdullah S

机构信息

Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia.

Department of Physics, Faculty of Science, Ibb University, Ibb 70270, Yemen.

出版信息

ACS Omega. 2020 Nov 12;5(46):30111-30122. doi: 10.1021/acsomega.0c04517. eCollection 2020 Nov 24.

Abstract

High-quality thin films were obtained directly by spin-coating glass substrates with suspensions of powdered cesium lead bromide (CsPbBr) perovskite quantum dots (PQDs). The structural properties of the films were characterized via transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) analysis, and atomic force microscopy (AFM). The crystal structure of the CsPbBr PQDs was unique. The optical behavior of the CsPbBr PQDs, including absorption and emission, was then investigated to determine the absorption coefficient and band gap of the material. The CsPbBr PQDs were evaluated as active lasing media and irradiated with a pulsed laser under ambient conditions. The PQDs were laser-active when subjected to optical pumping for pulse durations of 70-80 ps at 15 Hz. Amplified spontaneous emission (ASE) by the CsPbBr PQD thin films was observed, and a narrow ASE band (∼5 nm) was generated at a low threshold energy of 22.25 μJ cm. The estimated ASE threshold carrier density ( ) was ∼7.06 × 10 cm. Band-gap renormalization (BGR) was indicated by an ASE red shift and a BGR constant of ∼27.10 × 10 eV. A large optical absorption coefficient, photoluminescence (PL), and a substantial optical gain indicated that the CsPbBr PQD thin films could be embedded in a wide variety of cavity resonators to fabricate unique on-chip coherent light sources.

摘要

通过用溴化铯铅(CsPbBr)钙钛矿量子点(PQD)悬浮液旋涂玻璃基板,直接获得了高质量薄膜。通过透射电子显微镜(TEM)、能量色散X射线光谱(EDS)、X射线衍射(XRD)分析和原子力显微镜(AFM)对薄膜的结构特性进行了表征。CsPbBr PQD的晶体结构独特。然后研究了CsPbBr PQD的光学行为,包括吸收和发射,以确定材料的吸收系数和带隙。将CsPbBr PQD评估为有源激光介质,并在环境条件下用脉冲激光照射。当在15 Hz下以70 - 80 ps的脉冲持续时间进行光泵浦时,PQD具有激光活性。观察到CsPbBr PQD薄膜的放大自发发射(ASE),并在22.25 μJ cm的低阈值能量下产生了窄的ASE带(约5 nm)。估计的ASE阈值载流子密度( )约为7.06 × 10 cm。ASE红移和约27.10 × 10 eV的带隙重整化(BGR)常数表明了带隙重整化(BGR)。大的光学吸收系数、光致发光(PL)和显著的光学增益表明,CsPbBr PQD薄膜可以嵌入各种腔谐振器中,以制造独特的片上相干光源。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db79/7689956/7a35bc122d4a/ao0c04517_0002.jpg

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