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双带晶体的非线性光导率I

Nonlinear optical conductivity of a two-band crystal I.

作者信息

Passos D J, Ventura G B, Lopes Dos Santos J M B, Parente Lopes J M Viana

机构信息

Centro de Física das Universidades do Minho e Porto, Departamento de Física e Astronomia, Faculdade de Ciências, Universidade do Porto, 4169-007 Porto, Portugal.

出版信息

J Phys Condens Matter. 2021 Aug 31;33(46). doi: 10.1088/1361-648X/ac1c2d.

Abstract

The structure of the electronic nonlinear optical conductivity is elucidated in a detailed study of the time-reversal symmetric two-band model. The nonlinear conductivity is decomposed as a sum of contributions related with different regions of the first Brillouin zone, defined by single or multiphoton resonances. All contributions are written in terms of the same integrals, which contain all information specific to the particular model under study. In this way, ready-to-use formulas are provided that reduce the often tedious calculations of the second and third order optical conductivity to the evaluation of a small set of similar integrals. In the scenario where charge carriers are present prior to optical excitation, Fermi surface contributions must also be considered and are shown to have an universal frequency dependence, tunable by doping. General characteristics are made evident in this type of resonance-based analysis: the existence of step functions that determine the chemical potential dependence of electron-hole symmetric insulators; the determination of the imaginary part by Hilbert transforms, simpler than those of the nonlinear Kramers-Krönig relations; the absence of Drude peaks in the diagonal elements of the second order conductivity, among others. As examples, analytical expressions are derived for the nonlinear conductivities of some simple systems: a very basic model of direct gap semiconductors and the Dirac fermions of monolayer graphene.

摘要

在对时间反演对称双带模型的详细研究中,阐明了电子非线性光导率的结构。非线性电导率被分解为与第一布里渊区不同区域相关的贡献之和,这些区域由单光子或多光子共振定义。所有贡献都用相同的积分表示,这些积分包含了所研究特定模型的所有特定信息。通过这种方式,提供了现成的公式,将二阶和三阶光导率通常繁琐的计算简化为对一小部分相似积分的求值。在光激发之前存在电荷载流子的情况下,还必须考虑费米面贡献,并表明其具有通用的频率依赖性,可通过掺杂进行调节。在这种基于共振的分析中,一般特征变得明显:存在确定电子 - 空穴对称绝缘体化学势依赖性的阶跃函数;通过希尔伯特变换确定虚部,比非线性克莱默斯 - 克朗尼格关系的虚部更简单;二阶电导率对角元素中不存在德鲁德峰等。作为示例,推导了一些简单系统的非线性电导率的解析表达式:直接带隙半导体的一个非常基本的模型和单层石墨烯的狄拉克费米子。

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