Zhang Yungeng, Wu Yaxuan, Jin Chao, Ren Fengzhu, Wang Bing
Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Kaifeng 475004, People's Republic of China.
Nanotechnology. 2021 Sep 2;32(47). doi: 10.1088/1361-6528/ac1d07.
Atomically two-dimensional materials with direct band-gap and high carrier mobility are highly desirable due to their promising applications in electronic devices. Here, on the basis ofcalculations and global particle-swarm optimization method, we predict the BSmonolayer as a new semiconductor with favorable functional properties. The BSmonolayer possesses a high electron mobility of 553 cmVsand a direct band-gap of 1.85 eV. The direct band-gap can be manipulated under biaxial strain. Furthermore, BSmonolayer can absorb sunlight efficiently in the entire range of the visible light spectrum. Besides, this monolayer holds good dynamical, thermal, and mechanical stabilities. All the desired properties render BSmonolayer a promising candidate for future applications in high-speed (opto)electronic devices.
具有直接带隙和高载流子迁移率的原子级二维材料因其在电子器件中的应用前景而备受青睐。在此，基于计算和全局粒子群优化方法，我们预测BS单层作为一种具有良好功能特性的新型半导体。BS单层具有553 cm²V⁻¹s⁻¹的高电子迁移率和1.85 eV的直接带隙。直接带隙可在双轴应变下进行调控。此外，BS单层在整个可见光谱范围内都能有效吸收太阳光。此外，这种单层具有良好的动力学、热学和力学稳定性。所有这些理想特性使BS单层成为未来高速（光）电子器件应用的有前途的候选材料。
