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具有直接带隙和各向异性载流子迁移率的二维光子晶体

Two-Dimensional PC with Direct Band Gap and Anisotropic Carrier Mobility.

作者信息

Yu Tong, Zhao Ziyuan, Sun Yuanhui, Bergara Aitor, Lin Jianyan, Zhang Shoutao, Xu Haiyang, Zhang Lijun, Yang Guochun, Liu Yichun

机构信息

Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , Changchun 130024 , China.

College of Materials Science and Engineering and Key Laboratory of Automobile Materials of MOE , Jilin University , Changchun 130012 , China.

出版信息

J Am Chem Soc. 2019 Jan 30;141(4):1599-1605. doi: 10.1021/jacs.8b11350. Epub 2019 Jan 16.

Abstract

Graphene and phosphorene are two major types of atomically thin two-dimensional materials under extensive investigation. However, the zero band gap of graphene and the instability of phosphorene greatly restrict their applications. Here, we make first-principle unbiased structure search calculations to identify a new buckled graphene-like PC monolayer with a number of desirable functional properties. The PC monolayer is a direct-gap semiconductor with a band gap of 0.84 eV, and it has an extremely high intrinsic conductivity with anisotropic character (i.e., its electron mobility is 2.94 × 10 cm V s along the armchair direction, whereas the hole mobility reaches 1.64 × 10 cm V s along the zigzag direction), which is comparable to that of graphene. On the other hand, PC shows a high absorption coefficient (10 cm) in a broad band, from 300 to 2000 nm. Additionally, its direct band gap character can remain within a biaxial strain of 5%. All these appealing properties make the predicted PC monolayer a promising candidate for applications in electronic and photovoltaic devices.

摘要

石墨烯和磷烯是目前受到广泛研究的两种主要类型的原子级薄二维材料。然而,石墨烯的零带隙以及磷烯的不稳定性极大地限制了它们的应用。在此,我们进行了第一性原理无偏结构搜索计算,以确定一种具有许多理想功能特性的新型类石墨烯褶皱PC单层。该PC单层是一种直接带隙半导体,带隙为0.84电子伏特,并且具有极高的本征电导率,呈现各向异性特征(即,其电子迁移率沿扶手椅方向为2.94×10 cm²V⁻¹s⁻¹,而空穴迁移率沿锯齿方向达到1.64×10 cm²V⁻¹s⁻¹),这与石墨烯相当。另一方面,PC在300至2000纳米的宽带范围内显示出高吸收系数(10⁵ cm⁻¹)。此外,其直接带隙特性在5%的双轴应变范围内仍可保持。所有这些吸引人的特性使得预测的PC单层成为电子和光电器件应用的有前途的候选材料。

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