Camenzind Leon C, Svab Simon, Stano Peter, Yu Liuqi, Zimmerman Jeramy D, Gossard Arthur C, Loss Daniel, Zumbühl Dominik M
Department of Physics, University of Basel, Basel 4056, Switzerland.
Center for Emergent Matter Science, RIKEN, Saitama 351-0198, Japan.
Phys Rev Lett. 2021 Jul 30;127(5):057701. doi: 10.1103/PhysRevLett.127.057701.
We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength that allows us to extract the g factor. The measured g factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g factor. Experimental detection and identification of minute band-structure effects in the g factor is of significance for spin qubits in GaAs quantum dots.
我们通过实验确定了横向砷化镓单电子量子点中的各向同性和各向异性g因子修正。我们通过测量空量子点中各个自旋态的隧穿速率，来提取面内磁场具有不同强度和方向时的塞曼分裂。我们对塞曼能量进行了量化，并发现其与磁场强度呈线性依赖关系，这使我们能够提取g因子。所测得的g因子可根据自旋轨道相互作用对砷化镓体材料g因子引起的各向同性和各向异性修正来理解。对g因子中微小能带结构效应的实验检测和识别对于砷化镓量子点中的自旋量子比特具有重要意义。
