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有机太阳能电池运行的光强依赖性以及肖克利-里德-霍尔复合损失与双分子复合损失之间的主导切换

Light intensity dependence of organic solar cell operation and dominance switching between Shockley-Read-Hall and bimolecular recombination losses.

作者信息

Ryu Shinyoung, Ha Na Young, Ahn Y H, Park Ji-Yong, Lee Soonil

机构信息

Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea.

Department of Physics, Ajou University, Suwon, 16499, Korea.

出版信息

Sci Rep. 2021 Aug 18;11(1):16781. doi: 10.1038/s41598-021-96222-w.

Abstract

We investigated the variation of current density-voltage (J-V) characteristics of an organic solar cell (OSC) in the dark and at 9 different light intensities ranging from 0.01 to 1 sun of the AM1.5G spectrum. All three conventional parameters, short-circuit currents (J), open-circuit voltage (V), and Fill factor (FF), representing OSC performance evolved systematically in response to light intensity increase. Unlike J that showed quasi-linear monotonic increase, V and FF showed distinctive non-monotonic variations. To elucidate the origin of such variations, we performed extensive simulation studies including Shockley-Read-Hall (SRH) recombination losses. Simulation results were sensitive to defect densities, and simultaneous agreement to 10 measured J-V curves was possible only with the defect density of [Formula: see text]. Based on analyses of simulation results, we were able to separate current losses into SRH- and bimolecular-recombination components and, moreover, identify that the competition between SRH- and bimolecular-loss currents were responsible for the aforementioned variations in J, V, and FF. In particular, we verified that apparent demarcation in V, and FF variations, which seemed to appear at different light intensities, originated from the same mechanism of dominance switching between recombination losses.

摘要

我们研究了有机太阳能电池(OSC)在黑暗中以及在AM1.5G光谱的0.01至1个太阳的9种不同光强下的电流密度-电压(J-V)特性变化。代表OSC性能的所有三个传统参数,即短路电流(J)、开路电压(V)和填充因子(FF),都随着光强增加而系统地演变。与呈现准线性单调增加的J不同,V和FF呈现出独特的非单调变化。为了阐明这种变化的起源,我们进行了广泛的模拟研究,包括肖克利-里德-霍尔(SRH)复合损耗。模拟结果对缺陷密度敏感,只有在缺陷密度为[公式:见正文]时,才能同时与10条测量的J-V曲线相符。基于对模拟结果的分析,我们能够将电流损耗分为SRH复合电流和双分子复合电流成分,此外,还确定了SRH复合电流和双分子复合电流之间的竞争是上述J、V和FF变化的原因。特别是,我们验证了V和FF变化中看似出现在不同光强下的明显分界,源自复合损耗之间相同的主导切换机制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d04e/8373965/77e324fc5ea4/41598_2021_96222_Fig1_HTML.jpg

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