Tribollet Jérôme, Muller Dominique, Roques Stéphane, Bartringer Jérémy, Fix Thomas
Institut de Chimie de Strasbourg, Université de Strasbourg et CNRS, UMR 7177, 4 rue Blaise Pascal, CS 90032, F-67081 Strasbourg Cedex, France.
Nanoscale. 2021 Aug 28;13(32):13827-13834. doi: 10.1039/d1nr02877d. Epub 2021 Aug 4.
Silicon vacancy (VSi) color centers in bulk SiC are excellent electron spin qubits. However, most spin based quantum devices require shallow spin qubits, whose dynamics is often different from that of bulk ones. Here, we demonstrate (i) a new method for creating shallow VSi (V2) spin qubits below the SiC surface by low energy ion implantation through a sacrificial SiO layer, (ii) that these shallow VSi are dipolar coupled to an electronic spin bath, analysed by Hahn echo decay, dynamical decoupling (DD), and optically pumped pulsed electron-electron double resonance experiments (OP-PELDOR), (iii) that their coherence time increases with cooling of the spin bath (from 55 μs at 297 K to 107 μs at 28 K), and that it can be further extended to 220 μs at 100 K by DD, thus demonstrating their relevance for PELDOR-based quantum sensors and processors. Finally, (iv) external spin sensing is demonstrated by the shift of VSi magnetic resonance lines induced by the dipolar stray magnetic field of a nearby ferrimagnetic YIG film.
体相碳化硅中的硅空位（VSi）色心是优异的电子自旋量子比特。然而，大多数基于自旋的量子器件需要浅自旋量子比特，其动力学特性通常与体相量子比特不同。在此，我们展示了：（i）一种通过牺牲性SiO层进行低能离子注入在碳化硅表面下方创建浅VSi（V2）自旋量子比特的新方法；（ii）这些浅VSi与电子自旋库存在偶极耦合，通过哈恩回波衰减、动态解耦（DD）以及光泵浦脉冲电子 - 电子双共振实验（OP - PELDOR）进行分析；（iii）它们的相干时间随着自旋库的冷却而增加（从297 K时的55 μs增加到28 K时的107 μs），并且通过DD在100 K时可进一步延长至220 μs，从而证明了它们对于基于PELDOR的量子传感器和处理器的相关性。最后，（iv）通过附近亚铁磁性YIG薄膜的偶极杂散磁场引起的VSi磁共振线的位移证明了外部自旋传感。
