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同位素工程碳化硅中单核自旋的纠缠与控制

Entanglement and control of single nuclear spins in isotopically engineered silicon carbide.

作者信息

Bourassa Alexandre, Anderson Christopher P, Miao Kevin C, Onizhuk Mykyta, Ma He, Crook Alexander L, Abe Hiroshi, Ul-Hassan Jawad, Ohshima Takeshi, Son Nguyen T, Galli Giulia, Awschalom David D

机构信息

Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA.

Department of Physics, University of Chicago, Chicago, IL, USA.

出版信息

Nat Mater. 2020 Dec;19(12):1319-1325. doi: 10.1038/s41563-020-00802-6. Epub 2020 Sep 21.

DOI:10.1038/s41563-020-00802-6
PMID:32958880
Abstract

Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nuclear spins and present an ab initio method to predict the optimal isotopic fraction that maximizes the number of usable nuclear memories. We bolster these results by reporting high-fidelity electron spin control (F = 99.984(1)%), alongside extended coherence times (Hahn-echo T = 2.3 ms, dynamical decoupling T > 14.5 ms), and a >40-fold increase in Ramsey spin dephasing time (T*) from isotopic purification. Overall, this work underlines the importance of controlling the nuclear environment in solid-state systems and links single photon emitters with nuclear registers in an industrially scalable material.

摘要

固态中的核自旋既是退相干的原因,也是自旋量子比特的宝贵资源。在这项工作中,我们展示了对碳化硅(SiC)中孤立硅核自旋的控制,以在光学活性双空位自旋和强耦合核寄存器之间创建纠缠态。然后,我们展示了SiC的同位素工程如何实现对单个弱耦合核自旋的控制,并提出了一种从头算方法来预测使可用核存储器数量最大化的最佳同位素分数。我们通过报告高保真电子自旋控制(F = 99.984(1)%)、延长的相干时间(哈恩回波T = 2.3 ms,动态解耦T > 14.5 ms)以及同位素纯化使拉姆齐自旋退相时间(T*)增加40倍以上来支持这些结果。总体而言,这项工作强调了在固态系统中控制核环境的重要性,并将单光子发射器与工业可扩展材料中的核寄存器联系起来。

相似文献

1
Entanglement and control of single nuclear spins in isotopically engineered silicon carbide.同位素工程碳化硅中单核自旋的纠缠与控制
Nat Mater. 2020 Dec;19(12):1319-1325. doi: 10.1038/s41563-020-00802-6. Epub 2020 Sep 21.
2
Quantum decoherence dynamics of divacancy spins in silicon carbide.碳化硅中双空位自旋的量子退相干动力学
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High-fidelity spin entanglement using optimal control.使用最优控制实现高保真度的自旋纠缠。
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Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control.通过相干自旋控制实现单个碳化硅色心的珀塞尔增强。
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Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis).探索宽带隙半导体碳化硅中的高自旋色心:全面的磁共振研究(电子顺磁共振和电子核双共振分析)
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