Lee Hyungsoo, Yang Jin Wook, Tan Jeiwan, Park Jaemin, Shim Sang Gi, Park Young Sun, Yun Juwon, Kim Kyungmin, Jang Ho Won, Moon Jooho
Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
Adv Sci (Weinh). 2021 Nov;8(21):e2102458. doi: 10.1002/advs.202102458. Epub 2021 Sep 8.
To achieve a high solar-to-hydrogen (STH) conversion efficiency, delicate strategies toward high photocurrent together with sufficient onset potential should be developed. Herein, an SnS semiconductor is reported as a high-performance photocathode. Use of proper sulfur precursor having weak dipole moment allows to obtain high-quality dense SnS nanoplates with enlarged favorable crystallographic facet, while suppressing inevitable anisotropic growth. Furthermore, the introducing Ga O layer between SnS and TiO in SnS photocathodes efficiently improves the charge transport kinetics without charge trapping. The SnS photocathode reveals the highest photocurrent density of 28 mA cm at 0 V versus the reversible hydrogen electrode. Overall solar water splitting is demonstrated for the first time by combining the optimized SnS photocathode with a Mo:BiVO photoanode, achieving a STH efficiency of 1.7% and long-term stability of 24 h. High performance and low-cost SnS photocathode represent a promising new material in the field of photoelectrochemical solar water splitting.
为了实现高的太阳能到氢能（STH）转换效率，应制定出实现高光电流以及足够起始电位的精细策略。在此，报道了一种SnS半导体作为高性能光阴极。使用具有弱偶极矩的合适硫前驱体能够获得具有扩大的有利晶面的高质量致密SnS纳米片，同时抑制不可避免的各向异性生长。此外，在SnS光阴极的SnS和TiO之间引入GaO层可有效改善电荷传输动力学而不发生电荷俘获。SnS光阴极在相对于可逆氢电极0 V时显示出28 mA cm的最高光电流密度。通过将优化的SnS光阴极与Mo:BiVO光阳极相结合，首次实现了全太阳能水分解，实现了1.7%的STH效率和24小时的长期稳定性。高性能且低成本的SnS光阴极代表了光电化学太阳能水分解领域一种很有前景的新材料。
