Xu Xingliang, Zhang Lin, Dong Peng, Li Zhiqiang, Li Lianghui, Li Juntao, Zhang Jian
Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China.
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China.
Nanoscale Res Lett. 2021 Sep 10;16(1):141. doi: 10.1186/s11671-021-03601-3.
In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is found that the blocking voltage is significantly increased with UV irradiation, which is resulted from the depletion region width extension with the collection of positive charges under the increase of the surface negative charge density. The deep level transient spectroscopy reveals that the UV irradiation induced deep-level defects play a dominant role over the trapped negative charges, and therefore leads to the increase of blocking voltage of 4H-SiC PiN Diodes.
本文研究了紫外线（UV）辐照对高压4H-SiC PiN静态特性的影响。在紫外线辐照前后，4H-SiC PiN二极管的正向导通状态特性未观察到明显变化。然而，发现随着紫外线辐照，其阻断电压显著增加，这是由于表面负电荷密度增加时，正电荷的收集导致耗尽区宽度扩展所致。深能级瞬态谱表明，紫外线辐照诱导的深能级缺陷对捕获的负电荷起主导作用，从而导致4H-SiC PiN二极管的阻断电压增加。
