Knezevic Tihomir, Jelavić Eva, Yamazaki Yuichi, Ohshima Takeshi, Makino Takahiro, Capan Ivana
Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia.
Faculty of Science, University of Zagreb, Bijenička 32, 10000 Zagreb, Croatia.
Materials (Basel). 2023 Apr 25;16(9):3347. doi: 10.3390/ma16093347.
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemical vapor deposition (CVD) crystal growth. Boron incorporation was found to lead to the appearance of at least two boron-related deep-level defects, namely, shallow (B) and deep boron (D-center), with concentrations as high as 1 × 10 cm. Even though the boron concentration exceeded the nitrogen doping concentration by almost an order of magnitude, the steady-state electrical characteristics of the n-type 4H-SiC SBDs did not deteriorate.
我们报道了通过少数载流子瞬态光谱（MCTS）研究的低掺杂n型（氮掺杂）4H-SiC半透明肖特基势垒二极管（SBD）中与硼相关的缺陷。在化学气相沉积（CVD）晶体生长过程中引入了未知浓度的硼。发现硼的掺入导致至少出现两种与硼相关的深能级缺陷，即浅（B）和深硼（D中心），其浓度高达1×10 cm。尽管硼浓度比氮掺杂浓度高出近一个数量级，但n型4H-SiC SBD的稳态电学特性并未恶化。
