Wang Zhao, Zheng Wei, Hu Qichang, Lin Shiyan, Wu Yibing, Ye Dapeng
College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China.
State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
ACS Appl Mater Interfaces. 2021 Sep 22;13(37):44568-44576. doi: 10.1021/acsami.1c13006. Epub 2021 Sep 13.
GaO is a popular material for research on solar-blind ultraviolet detectors. However, its absorption cutoff edge is 253 nm, which is not an ideal cutoff edge of 280 nm. In this work, by adjusting the ratio of In/Ga elements in the films, a high-quality (InGa)O film with an absorption cutoff edge of 280 nm was obtained, which owns a uniform surface and preferred orientation. On this basis, a solar-blind ultraviolet photovoltaic detector was constructed based on the Pt/(InGa)O/-Si heterojunction. When the device is exposed to 254 nm UV light, its open-circuit voltage () can reach 354 mV. Under 0 V bias, the device has a responsivity of 0.48 mA/W with a rise time of 0.47 s and a decay time of 0.37 s; under -7 V bias, the device achieves a responsivity of 16.96 mA/W with a rise time of 0.17 s and a decay time of 0.33 s. The spectral response characteristics of the device show that it has a selective response to solar-blind ultraviolet light (cutoff wavelength is 280 nm) with a rejection ratio (/), which is greater by more than two orders of magnitude. This work provides a good reference for adjusting the band gap of GaO-based films and broadening their application fields.
氧化镓是用于日盲紫外探测器研究的一种热门材料。然而，其吸收截止边缘为253纳米，并非理想的280纳米截止边缘。在这项工作中，通过调整薄膜中铟/镓元素的比例，获得了一种吸收截止边缘为280纳米的高质量氧化铟镓（(InGa)O）薄膜，该薄膜具有均匀的表面和择优取向。在此基础上，基于Pt/(InGa)O/-Si异质结构建了日盲紫外光伏探测器。当该器件暴露于254纳米紫外光时，其开路电压（）可达354毫伏。在0伏偏压下，该器件的响应度为0.48毫安/瓦，上升时间为0.47秒，下降时间为0.37秒；在-7伏偏压下，该器件的响应度达到16.96毫安/瓦，上升时间为0.17秒，下降时间为0.33秒。该器件的光谱响应特性表明，它对日盲紫外光（截止波长为280纳米）具有选择性响应，其抑制比（/）大于两个数量级以上。这项工作为调整氧化镓基薄膜的带隙并拓宽其应用领域提供了良好的参考。
