Shu Lincong, Sha Shulin, Zhang Jia-Han, Zhang Shaohui, Wang Jinjin, Ji Xueqiang, Li Shan, Jiang Mingming, Tang Weihua, Liu Zeng
Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, People's Republic of China.
ACS Appl Mater Interfaces. 2024 Oct 9;16(40):54178-54188. doi: 10.1021/acsami.4c11333. Epub 2024 Sep 29.
Currently, research on Ag nanoparticles (AgNPs) predominantly focuses on UV/visible photodetection and UV emission, seemingly overlooking the significance of Ag in enhancing deep ultraviolet photon detection. In this work, (InGa)O thin films were fabricated by plasma-enhanced chemical vapor deposition. Due to the unique photoabsorbance characteristic and better interaction with photons of small-sized AgNPs, they effectively suppress the UVB absorbance caused by energy band engineering in the (InGa)O thin film while enhancing photoabsorbance in UVC due to the surface plasmon effect. Therefore, under the synergistic effect of enhanced photon absorbance and hot electron transfer, the performance of the detector is significantly improved, and its responsivity (), external quantum efficiency, and detectivity (*) are 193 mA/W, approximately 100%, and 10 Jones, respectively, at a bias of -6 V. The fast response time and decay time are 634.6 and 194.1 ms, respectively; the rapid decay facilitated by AgNPs is attributed to the increased indirect recombination rate. AgNPs exhibit excellent narrowband response characteristics and absorbance properties in specific wavelength bands for the InGaO photodetector. This research lays the foundation for the practical application of localized surface plasmon resonance-enhanced photon-sensing capabilities.
目前,关于银纳米颗粒(AgNPs)的研究主要集中在紫外/可见光探测和紫外发射上,似乎忽略了银在增强深紫外光子探测方面的重要性。在这项工作中,通过等离子体增强化学气相沉积制备了(InGa)O薄膜。由于独特的光吸收特性以及与小尺寸AgNPs光子的更好相互作用,它们有效地抑制了(InGa)O薄膜中能带工程引起的UVB吸收,同时由于表面等离子体效应增强了UVC中的光吸收。因此,在增强的光子吸收和热电子转移的协同作用下,探测器的性能得到显著提高,在-6V偏压下,其响应度()、外量子效率和探测率(*)分别为193mA/W、约100%和10琼斯。快速响应时间和衰减时间分别为634.6和194.1ms;AgNPs促进的快速衰减归因于间接复合率的增加。AgNPs在InGaO光电探测器的特定波长波段表现出优异的窄带响应特性和吸收特性。这项研究为局部表面等离子体共振增强光子传感能力的实际应用奠定了基础。