Fu Yubin, Chang Xiao, Yang Huan, Dmitrieva Evgenia, Gao Yixuan, Ma Ji, Huang Li, Liu Junzhi, Lu Hongliang, Cheng Zhihai, Du Shixuan, Gao Hong-Jun, Feng Xinliang
Center for Advancing Electronics Dresden (cfaed) & Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany.
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
Angew Chem Int Ed Engl. 2021 Dec 6;60(50):26115-26121. doi: 10.1002/anie.202109808. Epub 2021 Nov 5.
Combining solution-based and surface-assisted synthesis, we demonstrate the first synthesis of NBN-doped bis-tetracene (NBN-BT) and peri-tetracene (NBN-PT). The chemical structures are clearly elucidated by high-resolution scanning tunneling microscopy (STM) in combination with noncontact atomic force microscopy (nc-AFM). Scanning tunneling spectroscopy (STS) characterizations reveal that NBN-BT and NBN-PT possess higher energy gaps than bis-tetracene and peri-tetracene. Interestingly, NBN-BT can undergo stepwise one-electron oxidation and convert into its corresponding radical cation and then to its dication. The energy gap of the NBN-BT dication is similar to that of bis-tetracene, indicating their isoelectronic relationship. Moreover, a similar energy gap between the NBN-PT dication and peri-tetracene can be predicted by DFT calculations. This work provides a novel synthesis along with characterizations of multi-NBN-doped zigzag-edged peri-acenes with tunable electronic properties.
结合基于溶液的合成方法和表面辅助合成方法,我们首次合成了氮硼氮掺杂的并四苯(NBN-BT)和迫位并四苯(NBN-PT)。通过高分辨率扫描隧道显微镜(STM)结合非接触原子力显微镜(nc-AFM)清晰地阐明了其化学结构。扫描隧道谱(STS)表征表明,NBN-BT和NBN-PT比并四苯和迫位并四苯具有更高的能隙。有趣的是,NBN-BT可以进行逐步单电子氧化,转化为其相应的自由基阳离子,然后再转化为其二价阳离子。NBN-BT二价阳离子的能隙与并四苯相似,表明它们的等电子关系。此外,通过密度泛函理论(DFT)计算可以预测NBN-PT二价阳离子和迫位并四苯之间具有相似的能隙。这项工作提供了一种新颖的合成方法以及对具有可调电子性质的多氮硼氮掺杂锯齿形边缘迫位并苯的表征。