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无镉 InP/ZnSeS 量子点用于超高分辨率受激发射损耗成像。

Cd-free InP/ZnSeS quantum dots for ultrahigh-resolution imaging of stimulated emission depletion.

机构信息

Center for Biomedical Optics and Photonics (CBOP) and College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, People's Republic of China.

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russian Federation.

出版信息

J Biophotonics. 2021 Dec;14(12):e202100230. doi: 10.1002/jbio.202100230. Epub 2021 Sep 28.

DOI:10.1002/jbio.202100230
PMID:34523799
Abstract

Stimulated emission depletion (STED) nanoscopy is a promising super-resolution imaging technique for microstructure imaging; however, the performance of super-resolution techniques critically depends on the properties of the fluorophores (photostable fluorophores) used. In this study, a suitable probe for improving the resolution of STED nanoscopy was investigated. Quantum dots (QDs) typically exhibit good photobleaching resistance characteristics. In comparison with CdSe@ZnS QDs and CsPbBr QDs, Cd-free InP/ZnSeS QDs have a smaller size and exhibit an improved photobleaching resistance. Through imaging using InP/ZnSeS QDs, we achieved an ultrahigh resolution of 26.1 nm. Furthermore, we achieved a 31 nm resolution in cell experiments involving InP/ZnSeS QDs. These results indicate that Cd-free InP/ZnSeS QDs have significant potential for application in fluorescent probes for STED nanoscopy.

摘要

受激发射耗散(STED)纳米显微镜是一种很有前途的用于微观结构成像的超分辨率成像技术;然而,超分辨率技术的性能严重依赖于所使用的荧光团(光稳定荧光团)的性质。在本研究中,我们研究了一种合适的探针,以提高 STED 纳米显微镜的分辨率。量子点(QDs)通常表现出良好的抗光漂白特性。与 CdSe@ZnS QDs 和 CsPbBr QDs 相比,无 Cd 的 InP/ZnSeS QDs 具有更小的尺寸,并且表现出更好的抗光漂白性。通过使用 InP/ZnSeS QDs 进行成像,我们实现了超高分辨率 26.1nm。此外,我们在涉及 InP/ZnSeS QDs 的细胞实验中实现了 31nm 的分辨率。这些结果表明,无 Cd 的 InP/ZnSeS QDs 在 STED 纳米显微镜的荧光探针应用方面具有重要的应用潜力。

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