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基于硒化锑纳米管的近红外光电探测器中的微腔增强偏振光探测

Microcavity-Enhanced Polarization Photodetection in Antimony Selenide Nanotube-Based Near-Infrared Photodetectors.

作者信息

Zhang Songqing, As'Ham Khalil, Wang Han, Pan Wenwu, Al-Ani Ibrahim, Luo Huijia, Liu Junliang, Ren Yongling, Hattori Haroldo Takashi, Miroshnichenko Andrey E, Faraone Lorenzo, Lei Wen

机构信息

Department of Electrical, Electronic and Computer Engineering The University of Western Australia 35 Stirling Highway Crawley 6009 Australia.

School of Engineering and Technology University of New South Wales at Canberra Northcott Drive Campbell ACT 2600 Australia.

出版信息

Small Sci. 2024 Jul 12;4(10):2400216. doi: 10.1002/smsc.202400216. eCollection 2024 Oct.

Abstract

This study presents the polarization photodetection enhancement in SbSe nanotube (NT)-based near-infrared (NIR) photodetectors through simulation-based and experimental investigations. High-quality single-crystal SbSe NTs are grown chemical vapor deposition and characterized by using multiple techniques. The optical simulation reveals a remarkable difference in the light absorption ratio (specifically, absorption along the NT/nanowire (NW) against absorption perpendicular to the NT/NW) between SbSe NT and NW of the same size in the NIR region. The complementary photodetection experiments present that the fabricated SbSe NT photodetector demonstrates enhanced polarization photodetection in the NIR range, as indicated by a significantly increased dichroic ratio (3.03 at 850 nm) compared to that of similar-sized NW counterpart (1.81 at 850 nm). Additionally, the SbSe NT photodetector exhibits exceptional performance, with a high responsivity of 4.18 A W and specific detectivity of 8.94 × 10 Jones under 830 nm light illumination. This study provides a comprehensive understanding of the microcavity resonance effect and its role in polarization photodetection enhancement, highlighting the potential of self-assembled SbSe NTs in high-performance near-infrared polarized photodetection and other relevant applications.

摘要

本研究通过基于模拟和实验的研究,展示了基于SbSe纳米管(NT)的近红外(NIR)光电探测器中的偏振光探测增强。高质量的单晶SbSe NTs通过化学气相沉积生长,并使用多种技术进行表征。光学模拟揭示了在近红外区域中,相同尺寸的SbSe NT和纳米线(NW)之间的光吸收比存在显著差异(具体而言,沿NT/纳米线的吸收与垂直于NT/NW的吸收相比)。互补的光探测实验表明,所制备的SbSe NT光电探测器在近红外范围内表现出增强的偏振光探测,与类似尺寸的NW对应物相比,二向色比显著增加(850nm处为3.03)(850nm处为1.81)。此外,SbSe NT光电探测器表现出优异的性能,在830nm光照下具有4.18 A W的高响应度和8.94×10 Jones的比探测率。本研究全面理解了微腔共振效应及其在偏振光探测增强中的作用,突出了自组装SbSe NTs在高性能近红外偏振光探测及其他相关应用中的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e271/11935067/4f5787bb3140/SMSC-4-2400216-g004.jpg

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