半导体量子阱中的光学诱导近藤效应。

Optically induced Kondo effect in semiconductor quantum wells.

作者信息

Iorsh I V, Kibis O V

机构信息

Department of Physics and Engineering, ITMO University, Saint-Petersburg, 197101, Russia.

Department of Applied and Theoretical Physics, Novosibirsk State Technical University, Karl Marx Avenue 20, Novosibirsk 630073, Russia.

出版信息

J Phys Condens Matter. 2021 Oct 4;33(49). doi: 10.1088/1361-648X/ac28c2.

DOI:10.1088/1361-648X/ac28c2

PMID:34547723

Abstract

It is demonstrated theoretically that the circularly polarized irradiation of two-dimensional electron systems can induce the localized electron states which antiferromagnetically interact with conduction electrons, resulting in the Kondo effect. Conditions of experimental observation of the effect are discussed for semiconductor quantum wells.

摘要

从理论上证明，二维电子系统的圆偏振辐射可诱导出与传导电子发生反铁磁相互作用的局域电子态，从而产生近藤效应。文中讨论了在半导体量子阱中对该效应进行实验观测的条件。