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用于整流天线技术的氧化物

Oxides for Rectenna Technology.

作者信息

Mitrovic Ivona Z, Almalki Saeed, Tekin Serdar B, Sedghi Naser, Chalker Paul R, Hall Stephen

机构信息

Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK.

School of Engineering, University of Liverpool, Liverpool L69 3GH, UK.

出版信息

Materials (Basel). 2021 Sep 10;14(18):5218. doi: 10.3390/ma14185218.

DOI:10.3390/ma14185218
PMID:34576441
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8471330/
Abstract

The quest to harvest untapped renewable infrared energy sources has led to significant research effort in design, fabrication and optimization of a self-biased rectenna that can operate without external bias voltage. At the heart of its design is the engineering of a high-frequency rectifier that can convert terahertz and infrared alternating current (AC) signals to usable direct current (DC). The Metal Insulator Metal (MIM) diode has been considered as one of the ideal candidates for the rectenna system. Its unparalleled ability to have a high response time is due to the fast, femtosecond tunneling process that governs current transport. This paper presents an overview of single, double and triple insulator MIM diodes that have been fabricated so far, in particular focusing on reviewing key figures of merit, such as zero-bias responsivity (), zero-bias dynamic resistance () and asymmetry. The two major oxide contenders for MIM diodes have been NiO and AlO, in combination with HfO, TaO, NbO, ZnO and TiO. The latter oxide has also been used in combination with CoO and TiO. The most advanced rectennas based on MIM diodes have shown that optimal ( and ) can be achieved by carefully tailoring fabrication processes to control oxide stoichiometry and thicknesses to sub-nanometer accuracy.

摘要

对获取未开发的可再生红外能源的探索,促使人们在自偏置整流天线的设计、制造和优化方面投入了大量研究精力,这种整流天线无需外部偏置电压即可工作。其设计的核心是高频整流器的工程设计,该整流器可将太赫兹和红外交流电(AC)信号转换为可用的直流电(DC)。金属绝缘体金属(MIM)二极管被认为是整流天线系统的理想候选者之一。其具有高响应时间的无与伦比的能力归因于控制电流传输的快速飞秒隧穿过程。本文概述了迄今为止制造的单绝缘体、双绝缘体和三绝缘体MIM二极管,特别着重于回顾关键性能指标,如零偏置响应度()、零偏置动态电阻()和不对称性。MIM二极管的两种主要氧化物竞争者是NiO和AlO,它们与HfO、TaO、NbO、ZnO和TiO结合使用。后一种氧化物也与CoO和TiO结合使用。基于MIM二极管的最先进整流天线表明,通过精心调整制造工艺以将氧化物化学计量比和厚度控制到亚纳米精度,可以实现最佳的(和)。

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本文引用的文献

1
Demonstration of resonant tunneling effects in metal-double-insulator-metal (MIM) diodes.金属-双绝缘体-金属(MIM)二极管中共振隧穿效应的演示。
Nat Commun. 2021 May 18;12(1):2925. doi: 10.1038/s41467-021-23182-0.
2
High-current density and high-asymmetry MIIM diode based on oxygen-non-stoichiometry controlled homointerface structure for optical rectenna.基于用于光整流天线的氧非化学计量比控制同质界面结构的高电流密度和高不对称MIIM二极管。
Sci Rep. 2019 Dec 23;9(1):19639. doi: 10.1038/s41598-019-55898-x.
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用于收集环境电磁波的纳米材料与器件
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原子层沉积ZnO/β-GaO()异质结的能带研究。
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Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.氧化锌 Langmuir-Blodgett 膜的制备与表征及其在金属-绝缘体-金属隧道二极管中的应用。
Langmuir. 2016 Aug 23;32(33):8307-14. doi: 10.1021/acs.langmuir.6b02182. Epub 2016 Aug 9.
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Sensors (Basel). 2015 Apr 15;15(4):8787-831. doi: 10.3390/s150408787.
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Design, optimization and fabrication of a 28.3 THz nano-rectenna for infrared detection and rectification.用于红外探测与整流的28.3太赫兹纳米整流天线的设计、优化与制造
Sci Rep. 2014 Mar 6;4:4270. doi: 10.1038/srep04270.
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