高质量WS薄膜作为高效非富勒烯有机太阳能电池中的空穴传输层。
High-quality WS film as a hole transport layer in high-efficiency non-fullerene organic solar cells.
作者信息
Wang Xiaojing, Liu Peng, Yap Boonkar, Xia Ruidong, Wong Wai-Yeung, He Zhicai
机构信息
State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, International School of Advanced Materials, School of Material Science and Engineering, South China University of Technology, Guangzhou, Guangdong, 510640, China.
Electronic and Communications Department, College of Engineering, Universiti Tenaga Nasional, Kajang, Selangor 43000, Malaysia.
出版信息
Nanoscale. 2021 Oct 14;13(39):16589-16597. doi: 10.1039/d1nr03728e.
Liquid-exfoliated 2D transition metal disulfides (TMDs) are potential substitutes for poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as hole transport layers (HTLs) in Organic Solar Cells (OSCs). Herein, high-yield and high-quality WS flake layers are prepared by comprehensively controlling the initial concentration, sonication processing time and centrifugal speed. The WS layers deposited on transparent indium tin oxide (ITO) without plasma treatment show higher uniformity and conductivity than that formed on ITO after plasma treatment. With a significant increase in the short-circuit current density (), the power conversion efficiency (PCE) of PM6:Y6-based non-fullerene OSCs using optimized WS as the HTL is higher than that using PEDOT:PSS as the HTL(15.75% . 15.31%). Combining the morphology characteristics with carrier recombination characteristics, the higher quality of the ITO/WS composite substrate leads to better charge transport and a lower bimolecular recombination rate in OSCs, thereby improving the device performance.
液相剥离的二维过渡金属二硫化物（TMDs）有望替代聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT:PSS），作为有机太阳能电池（OSCs）中的空穴传输层（HTLs）。在此，通过综合控制初始浓度、超声处理时间和离心速度，制备了高产率和高质量的WS薄片层。沉积在未经等离子体处理的透明氧化铟锡（ITO）上的WS层比经等离子体处理后在ITO上形成的WS层具有更高的均匀性和导电性。随着短路电流密度（）显著增加，使用优化后的WS作为HTL的基于PM6:Y6的非富勒烯OSCs的功率转换效率（PCE）高于使用PEDOT:PSS作为HTL的器件（15.75% . 15.31%）。结合形貌特征和载流子复合特征，ITO/WS复合衬底的更高质量导致OSCs中更好的电荷传输和更低的双分子复合率，从而提高了器件性能。
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