Franke Kévin J A, Ophus Colin, Schmid Andreas K, Marrows Christopher H
School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, United Kingdom.
National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Phys Rev Lett. 2021 Sep 17;127(12):127203. doi: 10.1103/PhysRevLett.127.127203.
It has been shown previously that the presence of a Dzyaloshinskii-Moriya interaction in perpendicularly magnetized thin films stabilizes Néel type domain walls. We demonstrate, using micromagnetic simulations and analytical modeling, that the presence of a uniaxial in plane magnetic anisotropy can also lead to the formation of Néel walls in the absence of a Dzyaloshinskii-Moriya interaction. It is possible to abruptly switch between Bloch and Néel walls via a small modulation of the in plane, but also the perpendicular, magnetic anisotropy. This opens up a route toward electric field control of the domain wall type with small applied voltages through electric field controlled anisotropies.
先前已经表明，垂直磁化薄膜中存在Dzyaloshinskii-Moriya相互作用会使奈尔型畴壁稳定。我们通过微磁模拟和解析模型证明，在没有Dzyaloshinskii-Moriya相互作用的情况下，面内单轴磁各向异性的存在也会导致形成奈尔壁。通过对面内以及垂直方向磁各向异性进行小调制，可以在布洛赫壁和奈尔壁之间实现突然切换。这开辟了一条通过电场控制各向异性，以小的施加电压实现对畴壁类型进行电场控制的途径。
