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垂直磁化亚铁磁绝缘体中具有双稳态手性的尼尔畴壁。

Néel domain walls with bistable chirality in a perpendicularly magnetized ferrimagnetic insulator.

作者信息

Song Yixuan, Huang Siying, Bono David, Sadowski Jerzy T, Ross Caroline A, Beach Geoffrey S D

机构信息

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973-5000, USA.

出版信息

Nat Commun. 2025 Jun 4;16(1):5201. doi: 10.1038/s41467-025-60412-1.

Abstract

Field-free spin-orbit torque-driven domain wall motion in magnetic thin films with perpendicular magnetic anisotropy (PMA) requires the domain walls to have Néel character. Conventionally, Néel domain walls are stabilized by the Dzyaloshinskii-Moriya interaction (DMI) in ultrathin films. Here, in a europium iron garnet thin film with PMA and an additional uniaxial in-plane anisotropy, we demonstrate two bistable Néel domain wall states in the absence of DMI, and the capability to toggle the wall states with an in-plane field pulse and consequently their directions of motion under a current pulse. We present a phase diagram for the bistable Néel domain wall states as a function of in-plane field pulse width and amplitude. By fitting the experimental data to an analytical model of Néel wall reversal through the nucleation and propagation of Bloch lines, we extract the length of the initial reversed domain wall segment and Bloch line nucleation energy barrier. Current-driven motion of in-plane anisotropy stabilized Néel walls is qualitatively different from that of DMI-stabilized ones owing to the different symmetry of the effective fields that stabilize the Néel configuration. Furthermore, we present a proof of principle demonstration for 2-bit random number generation based on the stochastic reversal of domain wall chirality. These results provide critical insight into the topological energy barrier of Bloch lines and identify paths towards domain wall-based memory and computing devices.

摘要

在具有垂直磁各向异性(PMA)的磁性薄膜中,无外场自旋轨道转矩驱动的畴壁运动要求畴壁具有奈尔特性。传统上,奈尔畴壁是由超薄薄膜中的Dzyaloshinskii-Moriya相互作用(DMI)来稳定的。在此,在具有PMA和额外单轴面内各向异性的铕铁石榴石薄膜中,我们展示了在没有DMI的情况下的两种双稳态奈尔畴壁状态,以及通过面内场脉冲切换壁状态并因此在电流脉冲下切换其运动方向的能力。我们给出了双稳态奈尔畴壁状态作为面内场脉冲宽度和幅度函数的相图。通过将实验数据拟合到通过布洛赫线的成核和传播实现奈尔壁反转的解析模型,我们提取了初始反转畴壁段的长度和布洛赫线成核能垒。由于稳定奈尔构型的有效场的对称性不同,面内各向异性稳定的奈尔壁的电流驱动运动与DMI稳定的奈尔壁的电流驱动运动在性质上有所不同。此外,我们基于畴壁手性的随机反转给出了2位随机数生成的原理验证演示。这些结果为布洛赫线的拓扑能垒提供了关键见解,并确定了通往基于畴壁的存储器和计算设备的路径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/076b/12137953/f8a2f517187f/41467_2025_60412_Fig1_HTML.jpg

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