Mitsui Tadashi, Ishikawa Nobuhiro, Takeguchi Masaki
In-situ Characterization Technique Development Group, Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan.
Rev Sci Instrum. 2021 Sep 1;92(9):095103. doi: 10.1063/5.0056644.
We describe the development of a conductive-probe atomic force microscopy method combined with a fine-wavelength-tunable light source and use it to observe the photovoltaic distribution on a cross-sectional surface of an amorphous-silicon solar cell in near-band-edge excitation. The light source's wavelength resolution is dλ = 1 nm, and its intensity is 1 µW/cm (10 mW/m); this excitation condition is sufficiently fine and weak to investigate electrical properties in the near-band-edge wavelength range. The photovoltage is observed in the indium tin oxide (ITO) region, and the maximum photovoltage increases when we increase the excitation energy of the illumination light. However, the photovoltaic distribution parallel to the ITO layer becomes relatively localized as the excitation energy increases. This localized photovoltaic distribution suggests that the conductivity of the electric current path within the ITO layer should be inhomogeneous.
我们描述了一种结合了精细波长可调光源的导电探针原子力显微镜方法的开发，并使用它在近带边激发下观察非晶硅太阳能电池横截面表面上的光伏分布。光源的波长分辨率为dλ = 1 nm，其强度为1 μW/cm（10 mW/m）；这种激发条件足够精细和微弱，足以研究近带边波长范围内的电学性质。在铟锡氧化物（ITO）区域观察到光电压，并且当我们增加照明光的激发能量时，最大光电压会增加。然而，随着激发能量的增加，与ITO层平行的光伏分布变得相对局部化。这种局部化的光伏分布表明ITO层内电流路径的电导率应该是不均匀的。
