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少层PdSe中声子和电荷的厚度依赖性各向异性输运

Thickness-dependent anisotropic transport of phonons and charges in few-layered PdSe.

作者信息

Zhang Kai-Cheng, Cheng Lin-Yuan, Shen Chen, Li Yong-Feng, Liu Yong, Zhu Yan

机构信息

School of Physical Science and Technology, Bohai University, Jinzhou 121013, China.

出版信息

Phys Chem Chem Phys. 2021 Sep 14;23(34):18869-18884. doi: 10.1039/d1cp00992c. Epub 2021 Aug 23.

Abstract

So far, layered PdSe has attracted much attention due to its completely tunable band-gap with varying layer numbers, yet the thickness-dependent transporting properties have been rarely studied. We have systematically studied the electronic structures, phonon and charge transport properties, and thermoelectric properties of few-layered (from 1L to 4L) and bulk PdSe by first-principles calculations and Boltzmann transport theory. As the thickness increases, the energy levels of band edges relative to 4s of selenium move oppositely due to their different bonding states, leading to the power-law decrease of the band-gap. Meanwhile, the electron effective mass decreases rapidly while the hole effective mass increases significantly compared with those unperturbed. Calculations on elastic constants reveal that both bulk and few-layered PdSe are mechanically stable, and the bulk is ductile with a Poisson's ratio of 0.27. The shifts of Raman active modes with respect to the thickness as well as their Gruneisen parameters are analyzed and the underlying physics is discussed. At room temperature, the thermal conductivities of the bulk are 7.7, 10.1 and 0.9 W m K along the a, b and c axes, respectively. It is found that the low-frequency modes (<2.0 THz) contribute about 80% of in-plane thermal conductivities. Due to the enhanced contribution from the ZA mode, the thermal conductivity of few-layered PdSe is much larger than that of the bulk. The ZA mode is mainly scattered by itself and the Umklapp scattering dominates in the process as the thickness increases. Calculations on charge transport reveal that the electron mobility increases from 2.5-13.2 (1L) to 121.9-167.8 (4L) cm V s with the decreasing anisotropy μ/μ, while the hole mobility remains to be ∼20 cm V s, which is in good agreement with the experimental results. Calculations on the thermoelectric properties reveal that the ZT value as well as the power factor increases largely as the thickness increases and it gets to be optimum for the triple layer. Interestingly, the transport of electrons and phonons is decoupled along the out-of-plane direction, which makes bulk PdSe exhibit good thermoelectric performance along the c axis.

摘要

到目前为止,层状PdSe因其带隙可随层数完全可调而备受关注,但其与厚度相关的输运性质却鲜有研究。我们通过第一性原理计算和玻尔兹曼输运理论,系统地研究了少层(从1L到4L)和体相PdSe的电子结构、声子和电荷输运性质以及热电性质。随着厚度增加,由于硒的4s轨道与带边能级的键合状态不同,它们向相反方向移动,导致带隙呈幂律减小。同时,与未受扰动的情况相比,电子有效质量迅速减小,而空穴有效质量显著增加。弹性常数计算表明,体相和少层PdSe在力学上都是稳定的,体相具有0.27的泊松比,表现出延展性。分析了拉曼活性模式随厚度的变化及其格林艾森参数,并讨论了其背后的物理机制。在室温下,体相PdSe沿a、b和c轴的热导率分别为7.7、10.1和0.9 W m⁻¹ K⁻¹。发现低频模式(<2.0 THz)对平面内热导率的贡献约为80%。由于ZA模式的贡献增强,少层PdSe的热导率远大于体相。ZA模式主要被其自身散射,随着厚度增加,该过程中Umklapp散射占主导。电荷输运计算表明,电子迁移率从2.5 - 13.2(1L)增加到121.9 - 167.8(4L)cm² V⁻¹ s⁻¹,各向异性μ/μ减小,而空穴迁移率保持在~20 cm² V⁻¹ s⁻¹左右,这与实验结果吻合良好。热电性质计算表明,ZT值以及功率因子随着厚度增加而大幅增加,三层时达到最优。有趣的是,电子和声子的输运在面外方向上解耦,这使得体相PdSe沿c轴表现出良好的热电性能。

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