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以电荷耦合器件(CCD)、互补金属氧化物半导体(CMOS)和数字微镜器件(DMD)为例,探讨阈值评估方法在激光诱导损伤测量中的影响。

Impact of threshold assessment methods in laser-induced damage measurements using the examples of CCD, CMOS, and DMD.

作者信息

Schwarz Bastian, Ritt Gunnar, Eberle Bernd

出版信息

Appl Opt. 2021 Aug 1;60(22):F39-F49. doi: 10.1364/AO.423791.

Abstract

Based on our earlier investigations, we continued and intensified our effort on the assessment of laser-induced damage effects in the visible range on a digital micromirror device (DMD) in comparison to different electro-optical imaging sensors such as complementary metal-oxide-semiconductors (CMOS) and charge-coupled devices (CCD). The main two objectives of our current work are: i) to fill the gap for the damage threshold regarding the time scale of picosecond pulses (527 nm) for CCD and CMOS devices and ii) evaluate the performance of a new device, the DMD, with both nanosecond pulses (532 nm) and picosecond pulses (527 nm) and compare the results with those of the CCD/CMOS. In the course of this research, we improved the experimental setup. Furthermore, we characterized the damage caused by laser pulse energies exceeding the laser-induced damage threshold (LIDT). For both the CMOS and CCD cameras, we received damage thresholds of about 10/ (picosecond pulses). For the DMD, we obtained LIDT values of 130/ (nanosecond laser pulses) and 1500/ (picosecond laser pulses). In case of the CMOS devices, we additionally compared the appearance of the damage obtained from the output signal of the camera under test and the microscope images of the surface of the camera. The first visible changes on the surface of the sensor occurred at energy densities that are an order of magnitude higher than the threshold values related to the output signal.

摘要

基于我们早期的研究,我们继续并加大力度,与互补金属氧化物半导体(CMOS)和电荷耦合器件(CCD)等不同的电光成像传感器相比,评估数字微镜器件(DMD)在可见光范围内的激光诱导损伤效应。我们当前工作的两个主要目标是:i)填补关于CCD和CMOS器件皮秒脉冲(527 nm)时间尺度的损伤阈值的空白;ii)用纳秒脉冲(532 nm)和皮秒脉冲(527 nm)评估一种新器件DMD的性能,并将结果与CCD/CMOS的结果进行比较。在这项研究过程中,我们改进了实验装置。此外,我们对超过激光诱导损伤阈值(LIDT)的激光脉冲能量所造成的损伤进行了表征。对于CMOS和CCD相机,我们得到的损伤阈值约为10/(皮秒脉冲)。对于DMD,我们获得的LIDT值为130/(纳秒激光脉冲)和1500/(皮秒激光脉冲)。对于CMOS器件,我们还比较了从被测相机的输出信号获得的损伤外观与相机表面的显微镜图像。传感器表面的首次可见变化出现在能量密度比与输出信号相关的阈值高一个数量级的情况下。

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