Hafiz Shihab Bin, Al Mahfuz Mohammad M, Lee Sunghwan, Ko Dong-Kyun
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States.
School of Engineering Technology, Purdue University, West Lafayette, Indiana 47907, United States.
ACS Appl Mater Interfaces. 2021 Oct 20;13(41):49043-49049. doi: 10.1021/acsami.1c14749. Epub 2021 Oct 6.
As an emerging member of the colloidal semiconductor quantum dot materials family, intraband quantum dots are being extensively studied for thermal infrared sensing applications. High-performance detectors can be realized using a traditional p-n junction device design; however, the heavily doped nature of intraband quantum dots presents a new challenge in realizing diode devices. In this work, we utilize a trait uniquely available in a colloidal quantum dot material system to overcome this challenge: the ability to blend two different types of quantum dots to control the electrical property of the resulting film. We report on the preparation of binary mixture films containing midwavelength infrared AgSe intraband quantum dots and the fabrication of p-n heterojunction diodes with strong rectifying characteristics. The peak specific detectivity at 4.5 μm was measured to be 10 Jones at room temperature, which is an orders of magnitude improvement compared to the previous generation of intraband quantum dot detectors.
作为胶体半导体量子点材料家族的新兴成员，带内量子点正被广泛研究用于热红外传感应用。使用传统的p-n结器件设计可以实现高性能探测器；然而，带内量子点的重掺杂特性在实现二极管器件方面带来了新挑战。在这项工作中，我们利用胶体量子点材料系统中独特的特性来克服这一挑战：能够混合两种不同类型的量子点以控制所得薄膜的电学性质。我们报告了包含中波长红外AgSe带内量子点的二元混合薄膜的制备以及具有强整流特性的p-n异质结二极管的制造。在室温下，4.5μm处的峰值比探测率测量值为10琼斯，与上一代带内量子点探测器相比有数量级的提升。
