Hao Qun, Zhao Xue, Tang Xin, Chen Menglu
School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.
Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing 100081, China.
Materials (Basel). 2023 Feb 13;16(4):1562. doi: 10.3390/ma16041562.
The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the energy gap between the valence band and the conduction band. As a result, infrared materials are mainly limited to semi-metal or ternary alloys with narrow-bandgap bulk semiconductors, whose fabrication is complex and expensive. Different from interband transition, intraband transition utilizing the energy gap inside the band allows for a wider choice of materials. In this paper, we mainly discuss the recent developments on intraband infrared photodetectors, including 'bottom to up' devices such as quantum well devices based on the molecular beam epitaxial approach, as well as 'up to bottom' devices such as colloidal quantum dot devices based on the chemical synthesis.
随着红外技术开始满足越来越多的新兴应用，如智能建筑和汽车领域，它正被广泛使用。大多数红外光电探测器基于带间跃迁，即价带和导带之间的能隙。因此，红外材料主要限于具有窄带隙体半导体的半金属或三元合金，其制造复杂且昂贵。与带间跃迁不同，利用带内能量间隙的带内跃迁允许有更广泛的材料选择。在本文中，我们主要讨论带内红外光电探测器的最新进展，包括基于分子束外延方法的量子阱器件等“自下而上”的器件，以及基于化学合成的胶体量子点器件等“自上而下”的器件。
