Okada Hiroko, Fujimoto Masanao, Tanaka Natsumi, Saito Yuki, Asano Takashi, Noda Susumu, Takahashi Yasushi
Opt Express. 2021 Jul 19;29(15):24396-24410. doi: 10.1364/OE.431721.
Nanocavity devices based on silicon that can operate in the 1.2-µm band would be beneficial for several applications. We fabricate fifteen cavities with resonance wavelengths between 1.20 and 1.23 µm. Experimental quality (Q) factors larger than one million are obtained and the average Q values are lower for shorter wavelengths. Furthermore, we observe continuous-wave operation of a Raman silicon laser with an excitation wavelength of 1.20 µm and a Raman laser wavelength of 1.28 µm. The Q values of the nanocavity modes used to confine the excitation light and the Raman scattered light are about half of those for our Raman silicon laser operating in the 1.55-µm band. Nevertheless, this device exhibits an input-output characteristic with a clear laser threshold. Finally, we consider the effect of the higher scattering probability at shorter wavelengths on the Raman laser performance in the 1.2-µm band.
基于硅的纳米腔器件能够在1.2微米波段工作，这对多种应用都有益处。我们制造了15个共振波长在1.20至1.23微米之间的腔体。获得了大于100万的实验品质（Q）因子，且较短波长下的平均Q值更低。此外，我们观察到了激发波长为1.20微米、拉曼激光波长为1.28微米的拉曼硅激光器的连续波运转。用于限制激发光和拉曼散射光的纳米腔模式的Q值约为我们在1.55微米波段工作的拉曼硅激光器Q值的一半。尽管如此，该器件展现出具有清晰激光阈值的输入输出特性。最后，我们考虑了较短波长下较高散射概率对1.2微米波段拉曼激光性能的影响。
