通过微孔阵列提高基于氮化铟镓的红色发光二极管的性能。

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays.

作者信息

Zhuang Zhe, Iida Daisuke, Kirilenko Pavel, Ohkawa Kazuhiro

出版信息

Opt Express. 2021 Sep 13;29(19):29780-29788. doi: 10.1364/OE.435556.

Abstract

This study demonstrates the performance improvements of InGaN-based red light-emitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.

摘要

本研究通过在平面台面中制造微孔，展示了基于氮化铟镓的红色发光二极管（LED）的性能提升。在相同电流密度下，微孔LED（MHLED）的峰值波长相比于平面LED（PLED）呈现出约3 nm的蓝移。MHLED的最低半高宽为59 nm，略小于PLED的半高宽。波长为634 nm的MHLED在20 mA时的光输出功率和外量子效率分别为0.6 mW和1.5%，比PLED的相应值高8.5%。