尺寸对氮化铟镓红色微发光二极管影响的研究。
Study on the effect of size on InGaN red micro-LEDs.
作者信息
Horng Ray-Hua, Ye Chun-Xin, Chen Po-Wei, Iida Daisuke, Ohkawa Kazuhiro, Wu Yuh-Renn, Wuu Dong-Sing
机构信息
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.
Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan, ROC.
出版信息
Sci Rep. 2022 Jan 25;12(1):1324. doi: 10.1038/s41598-022-05370-0.
In this research, five sizes (100 × 100, 75 × 75, 50 × 50, 25 × 25, 10 × 10 µm) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10 × 10 μm micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs.
在本研究中，采用基于激光的直写和无掩膜技术制备了五种尺寸（100×100、75×75、50×50、25×25、10×10 µm）的氮化铟镓红色微发光二极管（LED）芯片。观察到随着注入电流的增加，微LED尺寸越小，发射波长的蓝移越明显。当注入电流从0.1 mA增加到1 mA时，10×10 µm微LED的发射波长从617.15 nm移至576.87 nm。明显的蓝移归因于应力释放和高电流密度注入。此外，在相同的注入电流密度下，较小芯片的微LED的输出功率密度非常相似。这种行为与铝镓铟磷微LED不同。侧壁缺陷更容易通过钝化修复，这与蓝色微LED的行为相似。结果表明，红色氮化铟镓外延结构为实现基于氮化镓的LED制造全彩LED提供了机会。
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