Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea.
Small. 2021 Nov;17(46):e2103365. doi: 10.1002/smll.202103365. Epub 2021 Oct 11.
Organic multi-valued logic (MVL) circuits can substantially improve the data processing efficiency in highly advanced wearable electronics. Organic ternary logic circuits can be implemented by utilizing the negative transconductance (NTC) of heterojunction transistors (H-TRs). To achieve high-performance organic ternary logic circuits, the range of NTC in H-TRs must be optimized in advance to ensure the well-defined intermediate logic state in ternary logic inverters (T-inverters). Herein, a simple and efficient strategy, which enables the systematic control of the range and position of NTC in H-TRs is presented. Each thickness of p-/n-type semiconductor in H-TRs is adjusted to control the channel conductivity. Furthermore, asymmetric source/drain (S/D) electrode structure is newly developed for H-TRs, which can adjust the amount of hole and electron injection, independently. Based on the semiconductor thickness variation and asymmetric S/D electrodes, the T-inverter exhibits full-swing operation with three distinguishable logic states, resulting in unprecedentedly high static noise margin (≈48% of the ideal value). Moreover, a flexible T-inverter with an ultrathin polymer dielectric is demonstrated, whose operating voltage is less than 8 V. The proposed strategy is fully compatible with the conventional integrated circuit design, which is highly desirable for broad applicability and scalability for various types of T-inverter production.
有机多值逻辑 (MVL) 电路可以显著提高高级可穿戴电子设备的数据处理效率。有机三值逻辑电路可以通过利用异质结晶体管 (H-TR) 的负跨导 (NTC) 来实现。为了实现高性能的有机三值逻辑电路,必须预先优化 H-TR 中的 NTC 范围,以确保三值逻辑反相器 (T-inverter) 中明确的中间逻辑状态。本文提出了一种简单有效的策略,可实现对 H-TR 中 NTC 范围和位置的系统控制。通过调整 H-TR 中 p-/n 型半导体的每一层厚度来控制沟道电导率。此外,还为 H-TRs 开发了新的非对称源/漏 (S/D) 电极结构,可分别调节空穴和电子的注入量。基于半导体厚度变化和非对称 S/D 电极,T-inverter 实现了全摆幅操作,具有三个可区分的逻辑状态,从而产生了前所未有的高静态噪声裕度(约为理想值的 48%)。此外,还展示了具有超薄聚合物电介质的柔性 T-inverter,其工作电压小于 8 V。所提出的策略与传统集成电路设计完全兼容,对于各种类型的 T-inverter 生产具有广泛的适用性和可扩展性,这是非常理想的。