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负跨导异质结有机晶体管及其在全摆幅三值电路中的应用。

Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits.

作者信息

Yoo Hocheon, On Sungmin, Lee Seon Baek, Cho Kilwon, Kim Jae-Joon

机构信息

Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea.

Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea.

出版信息

Adv Mater. 2019 Jul;31(29):e1808265. doi: 10.1002/adma.201808265. Epub 2019 May 22.

Abstract

Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H-TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics of H-TRs, ternary inverters have recently been demonstrated. However, they have shown incomplete inverter characteristics; the output voltage (V ) does not fully swing from V to G . A new H-TR device structure that consists of a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) layer stacked on a PTCDI-C13 layer is presented. Due to the continuous DNTT layer from source to drain, the proposed device exhibits novel switching behavior: p-type off/p-type subthreshold region /NTC/ p-type on. As a result, it has a very high on/off current ratio (≈10 ) and exhibits NTC behavior. It is also demonstrated that an array of 36 of these H-TRs have 100% yield, a uniform on/off current ratio, and uniform NTC characteristics. Furthermore, the proposed ternary inverter exhibits full V -to-G swing of V with three distinct logic states. The proposed transistors and inverters exhibit hysteresis-free operation due to the use of a hydrophobic gate dielectric and encapsulating layers. Based on this, the transient operation of a ternary inverter circuit is demonstrated for the first time.

摘要

多值逻辑(MVL)计算能够提供超出布尔逻辑的比特密度。与传统晶体管不同,异质结晶体管(H-TRs)呈现出负跨导(NTC)区域。利用H-TRs的NTC特性,最近已经展示了三进制反相器。然而,它们表现出不完全的反相器特性;输出电压(V )并未从V 完全摆幅至G 。本文提出了一种新的H-TR器件结构,该结构由堆叠在PTCDI-C13层上的二萘并[2,3-b:2',3'-f]噻吩并[3,2-b]噻吩(DNTT)层组成。由于从源极到漏极存在连续的DNTT层,所提出的器件呈现出新颖的开关行为:p型关断/p型亚阈值区域/NTC/p型导通。结果,它具有非常高的开/关电流比(≈10 )并呈现出NTC行为。还证明了由36个这种H-TRs组成的阵列具有100%的成品率、均匀的开/关电流比和均匀的NTC特性。此外,所提出的三进制反相器呈现出V 从V 到G 的完全摆幅以及三种不同的逻辑状态。由于使用了疏水栅介质和封装层,所提出的晶体管和反相器呈现出无滞后操作。基于此,首次展示了三进制反相器电路的瞬态操作。

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