• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

实验演示了通过稀土表面掺杂在拓扑绝缘体中诱导的磁致翘曲转变。

Experimental Demonstration of a Magnetically Induced Warping Transition in a Topological Insulator Mediated by Rare-Earth Surface Dopants.

机构信息

Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia, Calle Faraday 9, 28049 Madrid, Spain.

ALBA Synchrotron Light Source, Cerdanyola del Vallès, 08290 Barcelona, Spain.

出版信息

Nano Lett. 2023 Jul 12;23(13):6249-6258. doi: 10.1021/acs.nanolett.3c00587. Epub 2023 May 8.

DOI:10.1021/acs.nanolett.3c00587
PMID:37156508
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10347702/
Abstract

Magnetic topological insulators constitute a novel class of materials whose topological surface states (TSSs) coexist with long-range ferromagnetic order, eventually breaking time-reversal symmetry. The subsequent bandgap opening is predicted to co-occur with a distortion of the TSS warped shape from hexagonal to trigonal. We demonstrate such a transition by means of angle-resolved photoemission spectroscopy on the magnetically rare-earth (Er and Dy) surface-doped topological insulator BiSeTe. Signatures of the gap opening are also observed. Moreover, increasing the dopant coverage results in a tunable p-type doping of the TSS, thereby allowing for a gradual tuning of the Fermi level toward the magnetically induced bandgap. A theoretical model where a magnetic Zeeman out-of-plane term is introduced in the Hamiltonian governing the TSS rationalizes these experimental results. Our findings offer new strategies to control magnetic interactions with TSSs and open up viable routes for the realization of the quantum anomalous Hall effect.

摘要

磁性拓扑绝缘体构成了一类新型材料,其拓扑表面态 (TSS) 与长程铁磁有序共存,最终打破时间反演对称性。随后的能隙打开预计会伴随着 TSS 扭曲形状从六边形到三角形状的变形。我们通过在磁稀土 (Er 和 Dy) 表面掺杂拓扑绝缘体 BiSeTe 上进行角度分辨光发射谱来证明这种转变。我们还观察到了能隙打开的特征。此外,增加掺杂剂覆盖率会导致 TSS 的可调节 p 型掺杂,从而可以逐渐调整费米能级以接近磁诱导能隙。一个理论模型,即在控制 TSS 的哈密顿量中引入了一个平面外的磁塞曼项,合理地解释了这些实验结果。我们的发现为控制 TSS 与磁相互作用提供了新的策略,并为实现量子反常霍尔效应开辟了可行的途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/201a150fb009/nl3c00587_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/e23c11b1bc75/nl3c00587_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/c79f046d67b3/nl3c00587_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/2b62fc44e46b/nl3c00587_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/5a434627c4a5/nl3c00587_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/201a150fb009/nl3c00587_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/e23c11b1bc75/nl3c00587_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/c79f046d67b3/nl3c00587_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/2b62fc44e46b/nl3c00587_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/5a434627c4a5/nl3c00587_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dc0/10347702/201a150fb009/nl3c00587_0005.jpg

相似文献

1
Experimental Demonstration of a Magnetically Induced Warping Transition in a Topological Insulator Mediated by Rare-Earth Surface Dopants.实验演示了通过稀土表面掺杂在拓扑绝缘体中诱导的磁致翘曲转变。
Nano Lett. 2023 Jul 12;23(13):6249-6258. doi: 10.1021/acs.nanolett.3c00587. Epub 2023 May 8.
2
Massive Dirac fermion on the surface of a magnetically doped topological insulator.磁掺杂拓扑绝缘体表面的大质量狄拉克费米子。
Science. 2010 Aug 6;329(5992):659-62. doi: 10.1126/science.1189924.
3
Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films.在镧系掺杂拓扑绝缘体薄膜中观测到大量狄拉克费米子
Sci Rep. 2015 Oct 27;5:15767. doi: 10.1038/srep15767.
4
Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films.稀土掺杂拓扑绝缘体薄膜中的氧化效应
Sci Rep. 2016 Mar 9;6:22935. doi: 10.1038/srep22935.
5
Anomalous Hall effect in Nd-doped BiSbSTe topological insulator single crystals.钕掺杂的铋锑碲拓扑绝缘体单晶中的反常霍尔效应
Phys Chem Chem Phys. 2024 Jan 17;26(3):2638-2645. doi: 10.1039/d3cp05850f.
6
Mn-Rich MnSb Te : A Topological Insulator with Magnetic Gap Closing at High Curie Temperatures of 45-50 K.富锰的MnSbTe:一种在45 - 50K的高居里温度下磁隙闭合的拓扑绝缘体。
Adv Mater. 2021 Oct;33(42):e2102935. doi: 10.1002/adma.202102935. Epub 2021 Sep 1.
7
Prediction and observation of an antiferromagnetic topological insulator.反铁磁拓扑绝缘体的预测与观测。
Nature. 2019 Dec;576(7787):416-422. doi: 10.1038/s41586-019-1840-9. Epub 2019 Dec 18.
8
Crossover from 2D Ferromagnetic Insulator to Wide Band Gap Quantum Anomalous Hall Insulator in Ultrathin MnBiTe.超薄MnBiTe中从二维铁磁绝缘体到宽带隙量子反常霍尔绝缘体的转变
ACS Nano. 2021 Aug 24;15(8):13444-13452. doi: 10.1021/acsnano.1c03936. Epub 2021 Aug 13.
9
Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3.磁性拓扑绝缘体Cr掺杂(Sb,Bi)2Te3中的载流子介导铁磁性
Nat Commun. 2015 Nov 19;6:8913. doi: 10.1038/ncomms9913.
10
Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure.拓扑绝缘体/反铁磁体异质结构中量子反常霍尔效应及交换相互作用的观测
Adv Mater. 2020 Aug;32(34):e2001460. doi: 10.1002/adma.202001460. Epub 2020 Jul 21.

本文引用的文献

1
Slow Magnetic Relaxation of Dy Adatoms with In-Plane Magnetic Anisotropy on a Two-Dimensional Electron Gas.二维电子气上具有面内磁各向异性的镝吸附原子的慢磁弛豫
ACS Nano. 2022 Jul 26;16(7):11182-11193. doi: 10.1021/acsnano.2c04048. Epub 2022 Jun 30.
2
Magnetic Topological Insulator Heterostructures: A Review.磁性拓扑绝缘体异质结构:综述。
Adv Mater. 2023 Jul;35(27):e2102427. doi: 10.1002/adma.202102427. Epub 2021 Oct 19.
3
Absence of Magnetic Proximity Effect at the Interface of Bi_{2}Se_{3} and (Bi,Sb)_{2}Te_{3} with EuS.
在Bi₂Se₃与(Bi,Sb)₂Te₃和EuS的界面处不存在磁近邻效应。
Phys Rev Lett. 2020 Nov 27;125(22):226801. doi: 10.1103/PhysRevLett.125.226801.
4
Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds.4f电子填充对稀土-金表面化合物电子和磁性的影响。
Nanoscale. 2020 Nov 12;12(43):22258-22267. doi: 10.1039/d0nr04964f.
5
Identifying Native Point Defects in the Topological Insulator BiTe.识别拓扑绝缘体BiTe中的本征点缺陷。
ACS Nano. 2020 Oct 27;14(10):13172-13179. doi: 10.1021/acsnano.0c04861. Epub 2020 Oct 16.
6
Probing the low-temperature limit of the quantum anomalous Hall effect.探索量子反常霍尔效应的低温极限。
Sci Adv. 2020 Jun 17;6(25):eaaz3595. doi: 10.1126/sciadv.aaz3595. eCollection 2020 Jun.
7
Molecular Approach for Engineering Interfacial Interactions in Magnetic/Topological Insulator Heterostructures.用于构建磁性/拓扑绝缘体异质结构界面相互作用的分子方法。
ACS Nano. 2020 May 26;14(5):6285-6294. doi: 10.1021/acsnano.0c02498. Epub 2020 Apr 24.
8
Prediction and observation of an antiferromagnetic topological insulator.反铁磁拓扑绝缘体的预测与观测。
Nature. 2019 Dec;576(7787):416-422. doi: 10.1038/s41586-019-1840-9. Epub 2019 Dec 18.
9
Large magnetic gap at the Dirac point in BiTe/MnBiTe heterostructures.狄拉克点处大磁隙的 BiTe/MnBiTe 异质结构。
Nature. 2019 Dec;576(7787):423-428. doi: 10.1038/s41586-019-1826-7. Epub 2019 Dec 18.
10
The Material Efforts for Quantized Hall Devices Based on Topological Insulators.基于拓扑绝缘体的量子霍尔器件的材料研究
Adv Mater. 2020 Jul;32(27):e1904593. doi: 10.1002/adma.201904593. Epub 2019 Dec 16.