Philip Anish, Vasala Sami, Glatzel Pieter, Karppinen Maarit
Department of Chemistry and Materials Science, Aalto University, P.O. Box 16100, FI-00076 Espoo, Finland.
ESRF - The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France.
Dalton Trans. 2021 Nov 16;50(44):16133-16138. doi: 10.1039/d1dt02966e.
Atomic/molecular layer deposition (ALD/MLD) is currently strongly emerging as an intriguing route for novel metal-organic thin-film materials. This approach already covers a variety of metal and organic components, and potential applications related to sustainable energy technologies. Among the 3d metal components, nickel has remained unexplored so far. Here we report a robust and efficient ALD/MLD process for the growth of high-quality nickel terephthalate thin films. The films are deposited from Ni(thd) (thd: 2,2,6,6-tetramethyl-3,5-heptanedionate) and terephthalic acid (1,4-benzenedicarboxylic acid) precursors in the temperature range of 180-280 °C, with appreciably high growth rates up to 2.3 Å per cycle at 200 °C. The films are amorphous but the local structure and chemical state of the films are addressed based on XRR, FTIR and RIXS techniques.
原子/分子层沉积(ALD/MLD)目前正作为一种用于新型金属有机薄膜材料的有趣方法而迅速兴起。这种方法已经涵盖了各种金属和有机成分以及与可持续能源技术相关的潜在应用。在3d金属成分中,镍目前尚未得到探索。在此,我们报告了一种用于生长高质量对苯二甲酸镍薄膜的稳健且高效的ALD/MLD工艺。这些薄膜是在180-280°C的温度范围内由Ni(thd)(thd:2,2,6,6-四甲基-3,5-庚二酮)和对苯二甲酸(1,4-苯二甲酸)前驱体沉积而成的,在200°C时具有高达每循环2.3 Å的相当高的生长速率。这些薄膜是非晶态的,但基于XRR、FTIR和RIXS技术对薄膜的局部结构和化学状态进行了研究。