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用于有机场效应晶体管的含扩环端基的醌型小分子

Quinoidal Small Molecule Containing Ring-Extended Termini for Organic Field-Effect Transistors.

作者信息

Mok Yoonjung, Kim Yunseul, Moon Yina, Park Jong-Jin, Choi Yeonsu, Kim Dong-Yu

机构信息

School of Materials Science and Engineering (SMSE), Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.

出版信息

ACS Omega. 2021 Oct 7;6(41):27305-27314. doi: 10.1021/acsomega.1c04120. eCollection 2021 Oct 19.

DOI:10.1021/acsomega.1c04120
PMID:34693151
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8529684/
Abstract

In this work, we synthesized and characterized two quinoidal small molecules based on benzothiophene modified and original isatin terminal units, benzothiophene quinoidal thiophene (BzTQuT) and quinoidal thiophene (QuT), respectively, to investigate the effect of introducing a fused ring into the termini of quinoidal molecules. Extending the terminal unit of the quinoidal molecule affected the extension of π-electron delocalization and decreased the bond length alternation, which led to the downshifting of the collective Raman band and dramatically lowering the band gap. Organic field-effect transistor (OFET) devices in neat BzTQuT films showed p-type transport behavior with low hole mobility, which was ascribed to the unsuitable film morphology for charge transport. By blending with an amorphous insulating polymer, polystyrene, and poly(2-vinylnaphthalene), an OFET based on a BzTQuT film annealed at 150 °C exhibited improved mobility up to 0.09 cm V s. This work successfully demonstrated that the extension of terminal groups into the quinoidal structure should be an effective strategy for constructing narrow band gap and high charge transporting organic semiconductors.

摘要

在这项工作中，我们合成并表征了两种基于苯并噻吩修饰的和原始异吲哚酮端基的醌型小分子，分别为苯并噻吩醌型噻吩（BzTQuT）和醌型噻吩（QuT），以研究在醌型分子末端引入稠环的效果。扩展醌型分子的端基影响了π电子离域的扩展并减小了键长交替，这导致集体拉曼带的下移并显著降低了带隙。纯BzTQuT薄膜中的有机场效应晶体管（OFET）器件表现出具有低空穴迁移率的p型传输行为，这归因于不适合电荷传输的薄膜形态。通过与无定形绝缘聚合物聚苯乙烯和聚（2-乙烯基萘）共混，基于在150°C退火的BzTQuT薄膜的OFET表现出高达0.09 cm V s的改善迁移率。这项工作成功证明，将端基扩展到醌型结构中应该是构建窄带隙和高电荷传输有机半导体的有效策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/ff579671b33c/ao1c04120_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/ca0b86c8dbdb/ao1c04120_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/8dc5aa811932/ao1c04120_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/f092195d531f/ao1c04120_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/baeabaa03e62/ao1c04120_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/0a57aceb3c2d/ao1c04120_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/f72833ae544d/ao1c04120_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/f71fc34452fc/ao1c04120_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/1ea0abee47ac/ao1c04120_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/ff579671b33c/ao1c04120_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/ca0b86c8dbdb/ao1c04120_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/8dc5aa811932/ao1c04120_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/f092195d531f/ao1c04120_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/baeabaa03e62/ao1c04120_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/0a57aceb3c2d/ao1c04120_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/f72833ae544d/ao1c04120_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/f71fc34452fc/ao1c04120_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/1ea0abee47ac/ao1c04120_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c5e/8529684/ff579671b33c/ao1c04120_0009.jpg

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