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反溶剂辅助生长具有X射线敏感特性的厘米级无铅溴化铋杂化钙钛矿单晶

Antisolvent-assisted Crystallization of Centimeter-sized Lead-free Bismuth Bromide Hybrid Perovskite Single Crystals with X-ray Sensitive Merits.

作者信息

Xu Yaxin, Hu Jiarui, Du Xinyuan, Xiao Xinglin, Li Mingkai, Tang Jiang, Chen Junnian, He Yunbin

机构信息

Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science & Engineering, Hubei University, Wuhan, 430062, P. R. China.

Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.

出版信息

Chem Asian J. 2021 Dec 13;16(24):4137-4144. doi: 10.1002/asia.202101041. Epub 2021 Nov 10.

DOI:10.1002/asia.202101041
PMID:34713593
Abstract

Hybrid bismuth halides perovskites have emerged as promising candidates for X-ray detection, due to the strong absorptivity of high-energy X-ray photons, high resistivity, large carrier diffusion length and low toxicity. However, the mostly investigated hybrid bismuth iodides single crystals are usually opaque and require a harsh synthesis process. Herein, novel one-dimensional (1D) pentamethylenediamine bismuth bromide (PDA)BiBr single crystals were synthesized via an antisolvent-assisted crystallization method at room temperature. Bulk (PDA)BiBr single crystals have sizes of 10×1.3×1.5 mm and high transparency. They are shown to have low density of defects of 2.0×10  cm and obvious photoconductivity. Moreover, they exhibit large bulk resistivity of 2.13×10  Ω cm and good X-ray attenuation coefficient. Consequently, the vertical structured (PDA)BiBr single crystal X-ray photoconductor produces a sensitivity of 3.8 μC Gy  cm . This study provides a facile strategy for synthesizing bulk hybrid bismuth bromides single crystals with potential X-ray detection application.

摘要

卤化铋混合钙钛矿由于对高能X射线光子具有强吸收性、高电阻率、大载流子扩散长度和低毒性,已成为X射线检测的有前途的候选材料。然而,大多数研究的混合碘化铋单晶通常是不透明的,并且需要苛刻的合成过程。在此,通过反溶剂辅助结晶法在室温下合成了新型一维(1D)五亚甲基二胺溴化铋(PDA)BiBr单晶。块状(PDA)BiBr单晶尺寸为10×1.3×1.5 mm,具有高透明度。它们显示出2.0×10  cm的低密度缺陷和明显的光电导性。此外,它们表现出2.13×10  Ω cm的大体积电阻率和良好的X射线衰减系数。因此,垂直结构的(PDA)BiBr单晶X射线光电导体产生的灵敏度为3.8 μC Gy  cm 。本研究为合成具有潜在X射线检测应用的块状卤化铋混合单晶提供了一种简便策略。

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