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外延Al/InAs纳米线中的门控超电流

Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires.

作者信息

Elalaily Tosson, Kürtössy Olivér, Scherübl Zoltán, Berke Martin, Fülöp Gergö, Lukács István Endre, Kanne Thomas, Nygård Jesper, Watanabe Kenji, Taniguchi Takashi, Makk Péter, Csonka Szabolcs

机构信息

Department of Physics and Nanoelectronics "Momentum" Research Group of the Hungarian Academy of Sciences, Budapest University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary.

Department of Physics, Faculty of Science, Tanta University, Al-Geish Street, 31527 Tanta, Gharbia, Egypt.

出版信息

Nano Lett. 2021 Nov 24;21(22):9684-9690. doi: 10.1021/acs.nanolett.1c03493. Epub 2021 Nov 2.

DOI:10.1021/acs.nanolett.1c03493
PMID:34726405
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8631737/
Abstract

Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying ≃±23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.

摘要

超导纳米桥中的门控超电流(GCS)作为一种制造超导开关的手段,近来备受关注。尽管该效应在应用方面具有明显优势,但其微观机制仍存在争议。在这项工作中,我们首次在生长于砷化铟纳米线上的高度结晶超导体中实现了GCS。我们表明,通过在由结晶六方氮化硼层与纳米线绝缘的底部栅极上施加约±23 V的电压,外延铝层中的超电流可切换至正常状态。我们对温度和磁场依赖性的广泛研究表明,电场不太可能是我们器件中GCS的起源。尽管仅热电子注入无法解释我们的实验结果,但最近基于非平衡声子的图景与我们的大多数结果相符。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/7868e31d5593/nl1c03493_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/b9ddd72dab94/nl1c03493_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/8272a57100f1/nl1c03493_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/6447db44b8e4/nl1c03493_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/7868e31d5593/nl1c03493_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/b9ddd72dab94/nl1c03493_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/8272a57100f1/nl1c03493_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/6447db44b8e4/nl1c03493_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a8c/8631737/7868e31d5593/nl1c03493_0004.jpg

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Gate Control of Superconductivity in Mesoscopic All-Metallic Devices.介观全金属器件中超导性的门控
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Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires.Ta/InAs 纳米线中栅极驱动的非平衡超导特性。
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