Jang Yamujin, Seo Young-Min, Jang Hyeon-Sik, Heo Keun, Whang Dongmok
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonju 55324, Korea.
Sensors (Basel). 2021 Oct 31;21(21):7262. doi: 10.3390/s21217262.
We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.
我们报道了一种用于制造石墨烯场效应晶体管（FET）的新型石墨烯转移技术，该技术可避免石墨烯表面受到有害的有机污染。在石墨烯转移过程中，不再使用诸如聚甲基丙烯酸甲酯（PMMA）之类的有机支撑膜，而是直接在生长好的石墨烯衬底上沉积金膜。使用既定的有机膜转移方法制造的石墨烯FET很容易被有机残留物污染，而金膜可保护石墨烯通道免受这些污染物的影响。此外，由于金膜可作为电极，该方法还可简化器件制造工艺。我们使用这种金辅助转移方法成功制造出了具有清洁表面和改善电学性能的石墨烯FET。
