SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, South Korea.
Phys Chem Chem Phys. 2014 Mar 7;16(9):4098-105. doi: 10.1039/c3cp53900h.
One of the most significant issues that occurs when applying chemical-vapor deposited (CVD) graphene (Gr) to various high-performance device applications is the result of polymeric residues. Polymeric residues remain on the Gr surface during Gr polymer support transfer to an arbitrary substrate, and these residues degrade CVD Gr electrical properties. In this paper, we propose that a thin layer of gold be used as a CVD Gr transfer layer, instead of a polymer support layer, to enable a polymer residue-free transfer. Comparative investigation of the surface morphological and qualitative analysis of residues on Gr surfaces and Gr field-effect transistors (GFETs) using two transfer methods demonstrates that gold-transferred Gr, with uniform, smooth, and clean surfaces, enable GFETs to perform better than Gr transferred by the polymer, polymethylmethacrylate (PMMA). In GFETs fabricated by the gold transfer method, field-effect carrier mobility was greatly enhanced and the position of the Dirac point was significantly reduced compared to GFETs fabricated by the PMMA transfer method. In addition, compared to the PMMA-transferred GFETs, the gold-transferred GFETs showed greatly increased stability with smaller hysteresis and higher resistance to gate bias stress effects. These results suggest that the gold transfer method for Gr provides significant improvements in GFET performance and reliability by minimizing the polymeric residues and defects on Gr.
在将化学气相沉积（CVD）石墨烯（Gr）应用于各种高性能器件应用时，最显著的问题之一是聚合物残留物的结果。在将 Gr 聚合物支撑转移到任意基底期间，聚合物残留物残留在 Gr 表面上，并且这些残留物会降低 CVD Gr 的电性能。在本文中，我们提出使用薄金层代替聚合物支撑层作为 CVD Gr 的转移层，以实现无聚合物残留的转移。使用两种转移方法对 Gr 表面和 Gr 场效应晶体管（GFET）上的表面形态和残留定性分析的比较研究表明，具有均匀、光滑和清洁表面的金转移 Gr 能够使 GFET 表现优于聚合物（聚甲基丙烯酸甲酯（PMMA））转移的 Gr。在通过金转移方法制造的 GFET 中，与通过 PMMA 转移方法制造的 GFET 相比，场效应载流子迁移率得到了极大的提高，并且狄拉克点的位置也大大降低。此外，与 PMMA 转移的 GFET 相比，金转移的 GFET 显示出更大的稳定性，具有更小的滞后和更高的栅极偏置应力效应抵抗力。这些结果表明，通过最小化 Gr 上的聚合物残留和缺陷，Gr 的金转移方法可以显著提高 GFET 的性能和可靠性。
