Łoś Szymon, Fabisiak Kazimierz, Paprocki Kazimierz, Szybowicz Mirosław, Dychalska Anna, Spychaj-Fabisiak Ewa, Franków Wojciech
Institute of Mathematics and Physics, Bydgoszcz University of Science and Technology, Profesora Sylwestra Kaliskiego 7, 85796 Bydgoszcz, Poland.
Department of Production Engineering Management, University of Bydgoszcz, Unii Lubelskiej 4c, 85059 Bydgoszcz, Poland.
Materials (Basel). 2021 Nov 3;14(21):6615. doi: 10.3390/ma14216615.
The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current-voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.
通过热丝化学气相沉积（HF CVD）技术在n型硅（Si）上沉积了未掺杂的多晶金刚石薄膜（PDFs）。反应气体是甲烷和氢气的混合物。通过扫描电子显微镜（SEM）和拉曼光谱对所得的PDFs进行了表征，除了金刚石相外，还证实了sp2杂化碳键的存在。生长态的CVD金刚石层以氢为终端，并表现出p型导电性。通过温度依赖电流-电压（J-V/T）特性研究了氢化水平对p型金刚石/n-Si异质结电学性能的影响。所得结果表明，氢化处理后的晶界（GB）处界面态的能量分布变浅，空穴俘获截面减小。氢化可导致GB势垒显著降低。从微电子学中GB的氢钝化角度来看，这些结果可能很有趣。
