Ceppatelli Matteo, Scelta Demetrio, Serrano-Ruiz Manuel, Dziubek Kamil, Morana Marta, Svitlyk Volodymyr, Garbarino Gaston, Poręba Tomasz, Mezouar Mohamed, Peruzzini Maurizio, Bini Roberto
LENS, European Laboratory for Non-linear Spectroscopy, Via N. Carrara 1, I-50019 Sesto Fiorentino, Firenze, Italy.
ICCOM-CNR, Institute of Chemistry of OrganoMetallic Compounds, National Research Council of (Italy), Via Madonna del Piano 10, I-50019 Sesto Fiorentino, Firenze, Italy.
Angew Chem Int Ed Engl. 2022 Feb 1;61(6):e202114191. doi: 10.1002/anie.202114191. Epub 2021 Dec 21.
Chemical reactivity between As and N , leading to the synthesis of crystalline arsenic nitride, is here reported under high pressure and high temperature conditions generated by laser heating in a diamond anvil cell. Single-crystal synchrotron X-ray diffraction at different pressures between 30 and 40 GPa provides evidence for the synthesis of a covalent compound of AsN stoichiometry, crystallizing in a cubic P2 3 space group, in which each of the two elements is single-bonded to three atoms of the other and hosts an electron lone pair, in a tetrahedral anisotropic coordination. The identification of characteristic structural motifs highlights the key role played by the directional repulsive interactions between non-bonding electron lone pairs in the formation of the AsN structure. Additional data indicate the existence of AsN at room temperature from 9.8 up to 50 GPa. Implications concern fundamental aspects of pnictogens chemistry and the synthesis of innovative advanced materials.
本文报道了在金刚石对顶砧池中激光加热产生的高压和高温条件下,砷(As)与氮(N)之间的化学反应,该反应导致了晶体砷化氮的合成。在30至40 GPa的不同压力下进行的单晶同步辐射X射线衍射为化学计量比为AsN的共价化合物的合成提供了证据,该化合物结晶于立方P2 3空间群中,其中两种元素中的每一种都与另一种元素的三个原子单键相连,并在四面体各向异性配位中拥有一个孤电子对。特征结构基序的识别突出了非键合孤电子对之间的定向排斥相互作用在AsN结构形成中所起的关键作用。其他数据表明,在室温下,9.8至50 GPa范围内存在AsN。这一发现涉及氮族元素化学的基本方面以及创新先进材料的合成。