Mohabir Amar T, Aziz Daniel, Brummer Amy C, Taylor Kathleen E, Vogel Eric M, Filler Michael A
Georgia Institute of Technology, School of Chemical & Biomolecular Engineering, 30332, GA, United States of America.
School of Materials Science & Engineering 30332, GA, United States of America.
Nanotechnology. 2021 Dec 13;33(10). doi: 10.1088/1361-6528/ac3bed.
We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods-vapor-liquid-solid nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD)-into a cohesive whole. Here, we study ZrOon Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrOoccurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrOfilms, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.
我们展示了一种自下而上的工艺，用于对与半导体纳米线的底层掺杂剂分布对齐的同轴薄膜沉积进行编程。我们的工艺将三种不同的方法——气-液-固纳米线生长、通过表面蚀刻的选择性同轴光刻（SCALES）和区域选择性原子层沉积（AS-ALD）——协同结合成一个连贯的整体。在这里，我们研究ZrO/Si纳米线作为一个模型系统。首先生长具有轴向调制的n-Si/i-Si掺杂剂分布的Si纳米线。然后，SCALES在n-Si区域上产生同轴聚甲基丙烯酸甲酯（PMMA）掩膜。随后，ZrO的AS-ALD发生在暴露的i-Si区域上，而不是在被PMMA掩蔽的区域上。我们展示了纳米线掺杂剂分布、PMMA掩膜和ZrO薄膜之间的空间关系，证实了该工艺的可编程性。我们工艺的纳米级分辨率以及大量可用的AS-ALD化学方法有望在未来带来一系列机会，能够使用完全自下而上的方法生成结构复杂的纳米级材料和电子器件。
