Mohabir Amar T, Tutuncuoglu Gozde, Weiss Trent, Vogel Eric M, Filler Michael A
School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.
School of Materials Science & Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.
ACS Nano. 2020 Jan 28;14(1):282-288. doi: 10.1021/acsnano.9b04363. Epub 2019 Dec 26.
The fully bottom-up and scalable synthesis of complex micro/nanoscale materials and functional devices requires masking methods to define key features and direct the deposition of various coatings and films. Here, we demonstrate selective coaxial lithography etching of surfaces (SCALES), an enabling bottom-up process to add polymer masks to micro/nanoscale objects. SCALES is a three-step process, including (1) bottom-up synthesis of compositionally modulated structures, (2) surface-initiated polymerization of a conformal mask, and (3) selective removal of the mask only from regions whose underlying surface is susceptible to an etchant. We demonstrate the key features of and characterize the SCALES process with a series of model Si/Ge systems: Si and Ge wafers, Si and Ge nanowires, and Si/Ge heterostructure nanowires.
